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Title: Temperature-dependent resistance switching in SrTiO{sub 3}

Abstract

Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.

Authors:
 [1];  [2]; ; ; ; ; ;  [1];  [1];  [2];  [2];  [3];  [1];  [2]
  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (China)
  3. School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22590797
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC FIELDS; GEOMETRICAL ABERRATIONS; HYSTERESIS; LASERS; MONOCRYSTALS; OXYGEN; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VACANCIES

Citation Formats

Li, Jian-kun, University of Chinese Academy of Sciences, Beijing 100049, Ma, Chao, Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, Gu, Lin, He, Xu, Zhou, Wen-jia, Lu, Hui-bin, Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, University of Chinese Academy of Sciences, Beijing 100049, Collaborative Innovation Center of Quantum Matter, Beijing 100190, Zhang, Qing-hua, Yang, Guo-zhen, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. Temperature-dependent resistance switching in SrTiO{sub 3}. United States: N. p., 2016. Web. doi:10.1063/1.4953624.
Li, Jian-kun, University of Chinese Academy of Sciences, Beijing 100049, Ma, Chao, Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, Gu, Lin, He, Xu, Zhou, Wen-jia, Lu, Hui-bin, Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, University of Chinese Academy of Sciences, Beijing 100049, Collaborative Innovation Center of Quantum Matter, Beijing 100190, Zhang, Qing-hua, Yang, Guo-zhen, & Collaborative Innovation Center of Quantum Matter, Beijing 100190. Temperature-dependent resistance switching in SrTiO{sub 3}. United States. doi:10.1063/1.4953624.
Li, Jian-kun, University of Chinese Academy of Sciences, Beijing 100049, Ma, Chao, Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, Gu, Lin, He, Xu, Zhou, Wen-jia, Lu, Hui-bin, Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn, University of Chinese Academy of Sciences, Beijing 100049, Collaborative Innovation Center of Quantum Matter, Beijing 100190, Zhang, Qing-hua, Yang, Guo-zhen, and Collaborative Innovation Center of Quantum Matter, Beijing 100190. Mon . "Temperature-dependent resistance switching in SrTiO{sub 3}". United States. doi:10.1063/1.4953624.
@article{osti_22590797,
title = {Temperature-dependent resistance switching in SrTiO{sub 3}},
author = {Li, Jian-kun and University of Chinese Academy of Sciences, Beijing 100049 and Ma, Chao and Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn and Gu, Lin and He, Xu and Zhou, Wen-jia and Lu, Hui-bin and Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn and University of Chinese Academy of Sciences, Beijing 100049 and Collaborative Innovation Center of Quantum Matter, Beijing 100190 and Zhang, Qing-hua and Yang, Guo-zhen and Collaborative Innovation Center of Quantum Matter, Beijing 100190},
abstractNote = {Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.},
doi = {10.1063/1.4953624},
journal = {Applied Physics Letters},
number = 24,
volume = 108,
place = {United States},
year = {Mon Jun 13 00:00:00 EDT 2016},
month = {Mon Jun 13 00:00:00 EDT 2016}
}