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Title: Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

Abstract

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.

Authors:
; ;  [1]; ;  [2]
  1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
  2. National Nano Device Laboratories, Narlabs, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22590786
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL DEFECTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASERS; LAYERS; NANOWIRES; NUCLEATION; PHOTOLUMINESCENCE; QUANTUM WELLS; QUANTUM WIRES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS; X-RAY DIFFRACTION

Citation Formats

Han, Yu, Li, Qiang, Lau, Kei May, E-mail: eekmlau@ust.hk, Chang, Shih-Pang, and Hsu, Wen-Da. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon. United States: N. p., 2016. Web. doi:10.1063/1.4953839.
Han, Yu, Li, Qiang, Lau, Kei May, E-mail: eekmlau@ust.hk, Chang, Shih-Pang, & Hsu, Wen-Da. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon. United States. doi:10.1063/1.4953839.
Han, Yu, Li, Qiang, Lau, Kei May, E-mail: eekmlau@ust.hk, Chang, Shih-Pang, and Hsu, Wen-Da. 2016. "Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon". United States. doi:10.1063/1.4953839.
@article{osti_22590786,
title = {Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon},
author = {Han, Yu and Li, Qiang and Lau, Kei May, E-mail: eekmlau@ust.hk and Chang, Shih-Pang and Hsu, Wen-Da},
abstractNote = {We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Room temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.},
doi = {10.1063/1.4953839},
journal = {Applied Physics Letters},
number = 24,
volume = 108,
place = {United States},
year = 2016,
month = 6
}
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