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Title: Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys

Abstract

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Authors:
 [1]; ; ;  [2]; ; ;  [3];  [3]; ;  [4];  [1]
  1. AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany)
  2. Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)
  3. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  4. Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich (Germany)
Publication Date:
OSTI Identifier:
22590785
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHANNELING; COPPER ALLOYS; CRYSTALS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILVER ALLOYS; STRAINS; X-RAY DIFFRACTION

Citation Formats

Wendav, Torsten, Fischer, Inga A., Oehme, Michael, Schulze, Jörg, Montanari, Michele, Zoellner, Marvin Hartwig, Klesse, Wolfgang, Capellini, Giovanni, Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma, Driesch, Nils von den, Buca, Dan, Busch, Kurt, and Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin. Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys. United States: N. p., 2016. Web. doi:10.1063/1.4953784.
Wendav, Torsten, Fischer, Inga A., Oehme, Michael, Schulze, Jörg, Montanari, Michele, Zoellner, Marvin Hartwig, Klesse, Wolfgang, Capellini, Giovanni, Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma, Driesch, Nils von den, Buca, Dan, Busch, Kurt, & Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin. Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys. United States. https://doi.org/10.1063/1.4953784
Wendav, Torsten, Fischer, Inga A., Oehme, Michael, Schulze, Jörg, Montanari, Michele, Zoellner, Marvin Hartwig, Klesse, Wolfgang, Capellini, Giovanni, Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma, Driesch, Nils von den, Buca, Dan, Busch, Kurt, and Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin. 2016. "Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys". United States. https://doi.org/10.1063/1.4953784.
@article{osti_22590785,
title = {Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys},
author = {Wendav, Torsten and Fischer, Inga A. and Oehme, Michael and Schulze, Jörg and Montanari, Michele and Zoellner, Marvin Hartwig and Klesse, Wolfgang and Capellini, Giovanni and Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma and Driesch, Nils von den and Buca, Dan and Busch, Kurt and Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin},
abstractNote = {The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.},
doi = {10.1063/1.4953784},
url = {https://www.osti.gov/biblio/22590785}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}