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Title: Te homogeneous precipitation in Ge dislocation loop vicinity

Abstract

High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te{sup 2+} or Te{sup 1+} ions.

Authors:
; ; ; ;  [1]
  1. IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille (France)
Publication Date:
OSTI Identifier:
22590750
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; COMPUTERIZED SIMULATION; DEPTH; DISLOCATIONS; DOPED MATERIALS; MONTE CARLO METHOD; NUCLEATION; PRECIPITATION; RESOLUTION; TELLURIUM IONS

Citation Formats

Perrin Toinin, J., Portavoce, A., E-mail: alain.portavoce@im2np.fr, Texier, M., Bertoglio, M., and Hoummada, K. Te homogeneous precipitation in Ge dislocation loop vicinity. United States: N. p., 2016. Web. doi:10.1063/1.4953627.
Perrin Toinin, J., Portavoce, A., E-mail: alain.portavoce@im2np.fr, Texier, M., Bertoglio, M., & Hoummada, K. Te homogeneous precipitation in Ge dislocation loop vicinity. United States. doi:10.1063/1.4953627.
Perrin Toinin, J., Portavoce, A., E-mail: alain.portavoce@im2np.fr, Texier, M., Bertoglio, M., and Hoummada, K. Mon . "Te homogeneous precipitation in Ge dislocation loop vicinity". United States. doi:10.1063/1.4953627.
@article{osti_22590750,
title = {Te homogeneous precipitation in Ge dislocation loop vicinity},
author = {Perrin Toinin, J. and Portavoce, A., E-mail: alain.portavoce@im2np.fr and Texier, M. and Bertoglio, M. and Hoummada, K.},
abstractNote = {High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te{sup 2+} or Te{sup 1+} ions.},
doi = {10.1063/1.4953627},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}