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Title: Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

Abstract

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

Authors:
; ; ;  [1]; ;  [2]
  1. Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria)
  2. Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)
Publication Date:
OSTI Identifier:
22590748
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; CRYSTALS; DOPED MATERIALS; EQUIPMENT; LAYERS; PHASE VELOCITY; PIEZOELECTRICITY; SAPPHIRE; SCANDIUM; SENSORS; SIMULATION; SOUND WAVES; SPUTTERING; SUBSTRATES; SURFACES; THICKNESS; THIN FILMS

Citation Formats

Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at, Knobloch, T., Schneider, M., Schmid, U., Shaposhnikov, K., and Kaltenbacher, M.. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire. United States: N. p., 2016. Web. doi:10.1063/1.4953259.
Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at, Knobloch, T., Schneider, M., Schmid, U., Shaposhnikov, K., & Kaltenbacher, M.. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire. United States. doi:10.1063/1.4953259.
Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at, Knobloch, T., Schneider, M., Schmid, U., Shaposhnikov, K., and Kaltenbacher, M.. Mon . "Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire". United States. doi:10.1063/1.4953259.
@article{osti_22590748,
title = {Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire},
author = {Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at and Knobloch, T. and Schneider, M. and Schmid, U. and Shaposhnikov, K. and Kaltenbacher, M.},
abstractNote = {This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.},
doi = {10.1063/1.4953259},
journal = {Applied Physics Letters},
number = 23,
volume = 108,
place = {United States},
year = {Mon Jun 06 00:00:00 EDT 2016},
month = {Mon Jun 06 00:00:00 EDT 2016}
}