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Title: Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

Abstract

Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

Authors:
; ; ; ; ;  [1];  [2];  [1];  [2];  [2];  [3];  [4]
  1. Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China)
  2. (China)
  3. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China)
  4. Center of Material Science, National University of Defense Technology, Changsha 410073 (China)
Publication Date:
OSTI Identifier:
22590635
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; LEAD SELENIDES; MATHEMATICAL SOLUTIONS; NANOPARTICLES; QUANTUM DOTS; TRANSISTORS; TRAPS

Citation Formats

Che, Yongli, Zhang, Yating, E-mail: yating@tju.edu.cn, Song, Xiaoxian, Cao, Mingxuan, Zhang, Guizhong, Yao, Jianquan, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, Cao, Xiaolong, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, Dai, Haitao, and Yang, Junbo. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate. United States: N. p., 2016. Web. doi:10.1063/1.4955452.
Che, Yongli, Zhang, Yating, E-mail: yating@tju.edu.cn, Song, Xiaoxian, Cao, Mingxuan, Zhang, Guizhong, Yao, Jianquan, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, Cao, Xiaolong, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, Dai, Haitao, & Yang, Junbo. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate. United States. doi:10.1063/1.4955452.
Che, Yongli, Zhang, Yating, E-mail: yating@tju.edu.cn, Song, Xiaoxian, Cao, Mingxuan, Zhang, Guizhong, Yao, Jianquan, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, Cao, Xiaolong, Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072, College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, Dai, Haitao, and Yang, Junbo. Mon . "Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate". United States. doi:10.1063/1.4955452.
@article{osti_22590635,
title = {Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate},
author = {Che, Yongli and Zhang, Yating, E-mail: yating@tju.edu.cn and Song, Xiaoxian and Cao, Mingxuan and Zhang, Guizhong and Yao, Jianquan and Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 and Cao, Xiaolong and Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 and College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 and Dai, Haitao and Yang, Junbo},
abstractNote = {Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.},
doi = {10.1063/1.4955452},
journal = {Applied Physics Letters},
number = 1,
volume = 109,
place = {United States},
year = {Mon Jul 04 00:00:00 EDT 2016},
month = {Mon Jul 04 00:00:00 EDT 2016}
}