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Title: Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

Abstract

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.

Authors:
 [1];  [2]; ; ;  [1];  [3];  [1];  [4];  [5];  [6];  [7]; ;  [8];  [1];  [2];  [2]
  1. Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)
  2. (Japan)
  3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 (Japan)
  4. (NIMS), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)
  5. (JASRI), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
  6. Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan)
  7. Japan Synchrotron Radiation Research Institute (JASRI), Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)
  8. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22590623
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 26; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALCIUM FLUORIDES; DEPOSITS; FERROELECTRIC MATERIALS; MONOCLINIC LATTICES; POLARIZATION; POLYCRYSTALS; SILICON OXIDES; STRAINS; STRESSES; SUBSTRATES; THERMAL EXPANSION; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Shiraishi, Takahisa, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Katayama, Kiliha, Yokouchi, Tatsuhiko, Oikawa, Takahiro, Shimizu, Takao, Sakata, Osami, Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Japan Synchrotron Radiation Research Institute, Uchida, Hiroshi, Imai, Yasuhiko, Kiguchi, Takanori, Konno, Toyohiko J., Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp, Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502. Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films. United States: N. p., 2016. Web. doi:10.1063/1.4954942.
Shiraishi, Takahisa, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Katayama, Kiliha, Yokouchi, Tatsuhiko, Oikawa, Takahiro, Shimizu, Takao, Sakata, Osami, Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Japan Synchrotron Radiation Research Institute, Uchida, Hiroshi, Imai, Yasuhiko, Kiguchi, Takanori, Konno, Toyohiko J., Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp, Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, & Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502. Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films. United States. doi:10.1063/1.4954942.
Shiraishi, Takahisa, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Katayama, Kiliha, Yokouchi, Tatsuhiko, Oikawa, Takahiro, Shimizu, Takao, Sakata, Osami, Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Japan Synchrotron Radiation Research Institute, Uchida, Hiroshi, Imai, Yasuhiko, Kiguchi, Takanori, Konno, Toyohiko J., Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp, Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502. Mon . "Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films". United States. doi:10.1063/1.4954942.
@article{osti_22590623,
title = {Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films},
author = {Shiraishi, Takahisa and Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 and Katayama, Kiliha and Yokouchi, Tatsuhiko and Oikawa, Takahiro and Shimizu, Takao and Sakata, Osami and Synchrotron X-ray Station at SPring-8, National Institute for Materials Science and Japan Synchrotron Radiation Research Institute and Uchida, Hiroshi and Imai, Yasuhiko and Kiguchi, Takanori and Konno, Toyohiko J. and Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp and Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502 and Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502},
abstractNote = {To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.},
doi = {10.1063/1.4954942},
journal = {Applied Physics Letters},
number = 26,
volume = 108,
place = {United States},
year = {Mon Jun 27 00:00:00 EDT 2016},
month = {Mon Jun 27 00:00:00 EDT 2016}
}