skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Abstract

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Authors:
; ;  [1]
  1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
Publication Date:
OSTI Identifier:
22590620
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 26; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; EQUIPMENT; ILLUMINANCE; INSTABILITY; LAYERS; PASSIVATION; PLASMA; SILICON OXIDES; STABILITY; STRESSES; THIN FILMS; TRANSISTORS; TUNGSTEN OXIDES

Citation Formats

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw, Chang, Chih-Hsiang, and Chang, Chih-Jui. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure. United States: N. p., 2016. Web. doi:10.1063/1.4954978.
Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw, Chang, Chih-Hsiang, & Chang, Chih-Jui. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure. United States. doi:10.1063/1.4954978.
Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw, Chang, Chih-Hsiang, and Chang, Chih-Jui. Mon . "Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure". United States. doi:10.1063/1.4954978.
@article{osti_22590620,
title = {Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure},
author = {Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw and Chang, Chih-Hsiang and Chang, Chih-Jui},
abstractNote = {This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.},
doi = {10.1063/1.4954978},
journal = {Applied Physics Letters},
number = 26,
volume = 108,
place = {United States},
year = {Mon Jun 27 00:00:00 EDT 2016},
month = {Mon Jun 27 00:00:00 EDT 2016}
}