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Title: Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors

Abstract

Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O{sub N}-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O{sub N} can naturally account for the “super-recovery” in the peak transconductance.

Authors:
; ; ; ;  [1];  [2];  [3];  [1];  [3]; ; ;  [4];  [2];  [3]
  1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennesse 37235 (United States)
  2. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennesse 37235 (United States)
  3. (United States)
  4. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22590614
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIA; ANNEALING; DEHYDROGENATION; DENSITY FUNCTIONAL METHOD; ELECTRON MOBILITY; GALLIUM NITRIDES; STRESSES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS

Citation Formats

Jiang, R., E-mail: rong.jiang@vanderbilt.edu, Chen, J., Duan, G. X., Zhang, E. X., Schrimpf, R. D., Shen, X., Department of Physics and Materials Science, University of Memphis, Memphis, Tennesse 38152, Fleetwood, D. M., Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennesse 37235, Kaun, S. W., Kyle, E. C. H., Speck, J. S., Pantelides, S. T., and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennesse 37235. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors. United States: N. p., 2016. Web. doi:10.1063/1.4958706.
Jiang, R., E-mail: rong.jiang@vanderbilt.edu, Chen, J., Duan, G. X., Zhang, E. X., Schrimpf, R. D., Shen, X., Department of Physics and Materials Science, University of Memphis, Memphis, Tennesse 38152, Fleetwood, D. M., Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennesse 37235, Kaun, S. W., Kyle, E. C. H., Speck, J. S., Pantelides, S. T., & Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennesse 37235. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors. United States. doi:10.1063/1.4958706.
Jiang, R., E-mail: rong.jiang@vanderbilt.edu, Chen, J., Duan, G. X., Zhang, E. X., Schrimpf, R. D., Shen, X., Department of Physics and Materials Science, University of Memphis, Memphis, Tennesse 38152, Fleetwood, D. M., Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennesse 37235, Kaun, S. W., Kyle, E. C. H., Speck, J. S., Pantelides, S. T., and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennesse 37235. Mon . "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors". United States. doi:10.1063/1.4958706.
@article{osti_22590614,
title = {Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors},
author = {Jiang, R., E-mail: rong.jiang@vanderbilt.edu and Chen, J. and Duan, G. X. and Zhang, E. X. and Schrimpf, R. D. and Shen, X. and Department of Physics and Materials Science, University of Memphis, Memphis, Tennesse 38152 and Fleetwood, D. M. and Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennesse 37235 and Kaun, S. W. and Kyle, E. C. H. and Speck, J. S. and Pantelides, S. T. and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennesse 37235},
abstractNote = {Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O{sub N}-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O{sub N} can naturally account for the “super-recovery” in the peak transconductance.},
doi = {10.1063/1.4958706},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}