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Title: Schottky diodes from 2D germanane

Abstract

We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

Authors:
;  [1]; ;  [2];  [3];  [4]
  1. Nanoscience and Nanotechnology Centre, Department of Chemistry, Kumaun University, Nainital, 263001 Uttarakhand (India)
  2. Department of Chemistry, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
  3. Nanomaterials Core Characterization Center, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
  4. Department of Physics, Randolph-Macon College, Ashland, Virginia 23005 (United States)
Publication Date:
OSTI Identifier:
22590611
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CASTING; CASTINGS; CLATHRATES; ELECTRODES; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FOURIER TRANSFORMATION; GERMANENE; HYDROGENATION; INFRARED SPECTRA; POTENTIALS; SCHOTTKY BARRIER DIODES; SHEETS; STABILITY; X-RAY DIFFRACTION

Citation Formats

Sahoo, Nanda Gopal, Punetha, Vinay Deep, Esteves, Richard J, Arachchige, Indika U., Pestov, Dmitry, and McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu. Schottky diodes from 2D germanane. United States: N. p., 2016. Web. doi:10.1063/1.4955463.
Sahoo, Nanda Gopal, Punetha, Vinay Deep, Esteves, Richard J, Arachchige, Indika U., Pestov, Dmitry, & McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu. Schottky diodes from 2D germanane. United States. doi:10.1063/1.4955463.
Sahoo, Nanda Gopal, Punetha, Vinay Deep, Esteves, Richard J, Arachchige, Indika U., Pestov, Dmitry, and McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu. Mon . "Schottky diodes from 2D germanane". United States. doi:10.1063/1.4955463.
@article{osti_22590611,
title = {Schottky diodes from 2D germanane},
author = {Sahoo, Nanda Gopal and Punetha, Vinay Deep and Esteves, Richard J and Arachchige, Indika U. and Pestov, Dmitry and McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu},
abstractNote = {We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.},
doi = {10.1063/1.4955463},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}