Schottky diodes from 2D germanane
- Nanoscience and Nanotechnology Centre, Department of Chemistry, Kumaun University, Nainital, 263001 Uttarakhand (India)
- Department of Chemistry, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
- Nanomaterials Core Characterization Center, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.
- OSTI ID:
- 22590611
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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