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Title: Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Abstract

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Authors:
; ; ; ; ;  [1]
  1. Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)
Publication Date:
OSTI Identifier:
22590607
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; NANOPARTICLES; PENTACENE; POLYSTYRENE; TUNNEL EFFECT

Citation Formats

Wang, Shun, Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn, Zhong, Ya-Nan, Zhang, Zhong-Da, Xu, Jian-Long, and Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories. United States: N. p., 2016. Web. doi:10.1063/1.4958738.
Wang, Shun, Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn, Zhong, Ya-Nan, Zhang, Zhong-Da, Xu, Jian-Long, & Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories. United States. doi:10.1063/1.4958738.
Wang, Shun, Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn, Zhong, Ya-Nan, Zhang, Zhong-Da, Xu, Jian-Long, and Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn. 2016. "Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories". United States. doi:10.1063/1.4958738.
@article{osti_22590607,
title = {Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories},
author = {Wang, Shun and Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn and Zhong, Ya-Nan and Zhang, Zhong-Da and Xu, Jian-Long and Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn},
abstractNote = {High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.},
doi = {10.1063/1.4958738},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
  • High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.
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