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Title: Copper vapor-assisted growth of hexagonal graphene domains on silica islands

Abstract

Silica (SiO{sub 2}) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH{sub 4}) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO{sub 2} islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.

Authors:
; ;  [1];  [2]; ; ; ; ;  [1];  [3]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy Sciences, Beijing 100190 (China)
  2. (China)
  3. University of Chinese Academy of Sciences, Beijing 100049 (China)
Publication Date:
OSTI Identifier:
22590606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COPPER; DENDRITES; ELECTRON SCANNING; GRAPHENE; LAYERS; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SILANES; SILICA; SILICON OXIDES; VAPORS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Li, Jun, Que, Yande, Jiang, Lili, University of Chinese Academy of Sciences, Beijing 100049, Shen, Chengmin, E-mail: cmshen@iphy.ac.cn, Tian, Yuan, Wang, Yeliang, Du, Shixuan, Gao, Hong-Jun, E-mail: hjgao@iphy.ac.cn, and Bao, Deliang. Copper vapor-assisted growth of hexagonal graphene domains on silica islands. United States: N. p., 2016. Web. doi:10.1063/1.4958872.
Li, Jun, Que, Yande, Jiang, Lili, University of Chinese Academy of Sciences, Beijing 100049, Shen, Chengmin, E-mail: cmshen@iphy.ac.cn, Tian, Yuan, Wang, Yeliang, Du, Shixuan, Gao, Hong-Jun, E-mail: hjgao@iphy.ac.cn, & Bao, Deliang. Copper vapor-assisted growth of hexagonal graphene domains on silica islands. United States. doi:10.1063/1.4958872.
Li, Jun, Que, Yande, Jiang, Lili, University of Chinese Academy of Sciences, Beijing 100049, Shen, Chengmin, E-mail: cmshen@iphy.ac.cn, Tian, Yuan, Wang, Yeliang, Du, Shixuan, Gao, Hong-Jun, E-mail: hjgao@iphy.ac.cn, and Bao, Deliang. 2016. "Copper vapor-assisted growth of hexagonal graphene domains on silica islands". United States. doi:10.1063/1.4958872.
@article{osti_22590606,
title = {Copper vapor-assisted growth of hexagonal graphene domains on silica islands},
author = {Li, Jun and Que, Yande and Jiang, Lili and University of Chinese Academy of Sciences, Beijing 100049 and Shen, Chengmin, E-mail: cmshen@iphy.ac.cn and Tian, Yuan and Wang, Yeliang and Du, Shixuan and Gao, Hong-Jun, E-mail: hjgao@iphy.ac.cn and Bao, Deliang},
abstractNote = {Silica (SiO{sub 2}) islands with a dendritic structure were prepared on polycrystalline copper foil, using silane (SiH{sub 4}) as a precursor, by annealing at high temperature. Assisted by copper vapor from bare sections of the foil, single-layer hexagonal graphene domains were grown directly on the SiO{sub 2} islands by chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, Raman spectra, and X-ray photoelectron spectroscopy confirm that hexagonal graphene domains, each measuring several microns, were synthesized on the silica islands.},
doi = {10.1063/1.4958872},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
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