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Title: Inverse bilayer magnetoelectric thin film sensor

Abstract

Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

Authors:
; ;  [1]; ; ;  [2]; ;  [3]
  1. Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
  2. Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
  3. Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
Publication Date:
OSTI Identifier:
22590602
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; DEPOSITION; ELECTRICAL PROPERTIES; INTERFACES; LAYERS; MAGNETOSTRICTION; PIEZOELECTRICITY; RESONANCE; SENSORS; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., and Kienle, L. Inverse bilayer magnetoelectric thin film sensor. United States: N. p., 2016. Web. doi:10.1063/1.4958728.
Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., & Kienle, L. Inverse bilayer magnetoelectric thin film sensor. United States. doi:10.1063/1.4958728.
Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., and Kienle, L. Mon . "Inverse bilayer magnetoelectric thin film sensor". United States. doi:10.1063/1.4958728.
@article{osti_22590602,
title = {Inverse bilayer magnetoelectric thin film sensor},
author = {Yarar, E. and Piorra, A. and Quandt, E., E-mail: eq@tf.uni-kiel.de and Salzer, S. and Höft, M. and Knöchel, R. and Hrkac, V. and Kienle, L.},
abstractNote = {Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.},
doi = {10.1063/1.4958728},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}