skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Inverse bilayer magnetoelectric thin film sensor

Abstract

Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

Authors:
; ;  [1]; ; ;  [2]; ;  [3]
  1. Chair for Inorganic Functional Materials, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
  2. Microwave Laboratory, Institute of Electrical and Information Engineering, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
  3. Chair for Synthesis and Real Structure, Institute for Materials Science, Faculty of Engineering, Kiel University, Kaiserstraße 2, D-24143 Kiel (Germany)
Publication Date:
OSTI Identifier:
22590602
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; DEPOSITION; ELECTRICAL PROPERTIES; INTERFACES; LAYERS; MAGNETOSTRICTION; PIEZOELECTRICITY; RESONANCE; SENSORS; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., and Kienle, L. Inverse bilayer magnetoelectric thin film sensor. United States: N. p., 2016. Web. doi:10.1063/1.4958728.
Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., & Kienle, L. Inverse bilayer magnetoelectric thin film sensor. United States. doi:10.1063/1.4958728.
Yarar, E., Piorra, A., Quandt, E., E-mail: eq@tf.uni-kiel.de, Salzer, S., Höft, M., Knöchel, R., Hrkac, V., and Kienle, L. 2016. "Inverse bilayer magnetoelectric thin film sensor". United States. doi:10.1063/1.4958728.
@article{osti_22590602,
title = {Inverse bilayer magnetoelectric thin film sensor},
author = {Yarar, E. and Piorra, A. and Quandt, E., E-mail: eq@tf.uni-kiel.de and Salzer, S. and Höft, M. and Knöchel, R. and Hrkac, V. and Kienle, L.},
abstractNote = {Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.},
doi = {10.1063/1.4958728},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
  • Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less
  • Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film inmore » presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.« less
  • A polymer-based magnetoelectric 2-2 composite was fabricated in a thin film approach by direct spin coating of polyvinylidenefluoride-co-trifluoroethylene onto a Metglas substrate without the usage of an adhesive for the mechanical coupling between the piezoelectric and magnetostrictive materials. For a prototype single-sided clamped cantilever, a magnetoelectric coefficient as high as 850 V cm{sup −1} Oe{sup −1} is observed at its fundamental bending mode resonance frequency at 27.8 Hz and a detection limit of 10 pTHz{sup −1/2} at its second bending mode resonance frequency at 169.5 Hz.
  • Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroicmore » devices.« less