skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices

Abstract

Measurements of the equilibrium majority carrier electron concentration (n{sub 0}) in narrow-bandgap n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices are made using contactless time-resolved microwave reflectance (TMR). By calibrating TMR decays to the number of optically injected electron-hole pairs, direct conversion to carrier lifetimes as a function of excited carrier density is made and allowing for accurate measurement of n{sub 0}. The temperature dependence of both n{sub 0} and the intrinsic carrier density (n{sub i}) are measured using this method, where n{sub 0} = 1 × 10{sup 15 }cm{sup −3} and n{sub i} = 1.74 × 10{sup 11 }cm{sup −3} at 100 K. These results provide non-destructive insight into critical parameters that directly determine infrared photodetector dark diffusion current.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22590597
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CARRIER DENSITY; CARRIER LIFETIME; EQUILIBRIUM; INDIUM ARSENIDES; MAGNETORESISTANCE; MICROWAVE RADIATION; PHOTODETECTORS; SUPERLATTICES; TEMPERATURE DEPENDENCE; TIME RESOLUTION; TUNNEL EFFECT

Citation Formats

Olson, B. V., E-mail: bolson@vixarinc.com, Kadlec, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., and Shaner, E. A., E-mail: eashane@sandia.gov. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices. United States: N. p., 2016. Web. doi:10.1063/1.4956351.
Olson, B. V., E-mail: bolson@vixarinc.com, Kadlec, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., & Shaner, E. A., E-mail: eashane@sandia.gov. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices. United States. doi:10.1063/1.4956351.
Olson, B. V., E-mail: bolson@vixarinc.com, Kadlec, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Tauke-Pedretti, A., Coon, W. T., Fortune, T. R., and Shaner, E. A., E-mail: eashane@sandia.gov. Mon . "Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices". United States. doi:10.1063/1.4956351.
@article{osti_22590597,
title = {Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices},
author = {Olson, B. V., E-mail: bolson@vixarinc.com and Kadlec, E. A. and Kim, J. K. and Klem, J. F. and Hawkins, S. D. and Tauke-Pedretti, A. and Coon, W. T. and Fortune, T. R. and Shaner, E. A., E-mail: eashane@sandia.gov},
abstractNote = {Measurements of the equilibrium majority carrier electron concentration (n{sub 0}) in narrow-bandgap n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices are made using contactless time-resolved microwave reflectance (TMR). By calibrating TMR decays to the number of optically injected electron-hole pairs, direct conversion to carrier lifetimes as a function of excited carrier density is made and allowing for accurate measurement of n{sub 0}. The temperature dependence of both n{sub 0} and the intrinsic carrier density (n{sub i}) are measured using this method, where n{sub 0} = 1 × 10{sup 15 }cm{sup −3} and n{sub i} = 1.74 × 10{sup 11 }cm{sup −3} at 100 K. These results provide non-destructive insight into critical parameters that directly determine infrared photodetector dark diffusion current.},
doi = {10.1063/1.4956351},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}