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Title: Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

Abstract

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

Authors:
; ;  [1]; ;  [2]
  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
  2. Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22590574
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; CURRENTS; ELECTRIC POTENTIAL; EQUIPMENT; HOLES; PERFORMANCE; POTENTIALS; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; VISIBLE RADIATION

Citation Formats

Kim, Bongjun, Liang, Kelly, Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu, Geier, Michael L., and Hersam, Mark C.. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures. United States: N. p., 2016. Web. doi:10.1063/1.4958851.
Kim, Bongjun, Liang, Kelly, Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu, Geier, Michael L., & Hersam, Mark C.. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures. United States. doi:10.1063/1.4958851.
Kim, Bongjun, Liang, Kelly, Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu, Geier, Michael L., and Hersam, Mark C.. Mon . "Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures". United States. doi:10.1063/1.4958851.
@article{osti_22590574,
title = {Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures},
author = {Kim, Bongjun and Liang, Kelly and Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu and Geier, Michael L. and Hersam, Mark C.},
abstractNote = {We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.},
doi = {10.1063/1.4958851},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}