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Title: Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices

Abstract

Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)
  2. Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
Publication Date:
OSTI Identifier:
22590565
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITS; DOPED MATERIALS; ELECTRIC POTENTIAL; ENERGY BEAM DEPOSITION; ENERGY TRANSFER; EQUIPMENT; ERBIUM; ERBIUM IONS; GALLIUM NITRIDES; GALLIUM OXIDES; HOLES; LASER RADIATION; LASERS; PULSES; RECOMBINATION; SUBSTRATES; THIN FILMS; VISIBLE RADIATION

Citation Formats

Chen, Zhengwei, Wang, Xu, Zhang, Fabi, Noda, Shinji, Saito, Katsuhiko, Tanaka, Tooru, Nishio, Mitsuhiro, Guo, Qixin, E-mail: guoq@cc.saga-u.ac.jp, and Arita, Makoto. Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices. United States: N. p., 2016. Web. doi:10.1063/1.4958838.
Chen, Zhengwei, Wang, Xu, Zhang, Fabi, Noda, Shinji, Saito, Katsuhiko, Tanaka, Tooru, Nishio, Mitsuhiro, Guo, Qixin, E-mail: guoq@cc.saga-u.ac.jp, & Arita, Makoto. Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices. United States. doi:10.1063/1.4958838.
Chen, Zhengwei, Wang, Xu, Zhang, Fabi, Noda, Shinji, Saito, Katsuhiko, Tanaka, Tooru, Nishio, Mitsuhiro, Guo, Qixin, E-mail: guoq@cc.saga-u.ac.jp, and Arita, Makoto. 2016. "Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices". United States. doi:10.1063/1.4958838.
@article{osti_22590565,
title = {Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices},
author = {Chen, Zhengwei and Wang, Xu and Zhang, Fabi and Noda, Shinji and Saito, Katsuhiko and Tanaka, Tooru and Nishio, Mitsuhiro and Guo, Qixin, E-mail: guoq@cc.saga-u.ac.jp and Arita, Makoto},
abstractNote = {Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.},
doi = {10.1063/1.4958838},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
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