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Title: Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}

Abstract

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

Authors:
; ;  [1];  [2];  [1];  [2];  [2]
  1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22590563
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH SELENIDES; EPITAXY; INTERFACES; LAYERS; SURFACES; TIN SELENIDES; TOPOLOGY; VAN DER WAALS FORCES

Citation Formats

Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}. United States: N. p., 2016. Web. doi:10.1063/1.4958936.
Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, & Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}. United States. doi:10.1063/1.4958936.
Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. Mon . "Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}". United States. doi:10.1063/1.4958936.
@article{osti_22590563,
title = {Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}},
author = {Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru and Kibirev, I. A. and Saranin, A. A. and Far Eastern Federal University, Vladivostok 690950 and Zotov, A. V. and Far Eastern Federal University, Vladivostok 690950 and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600},
abstractNote = {The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.},
doi = {10.1063/1.4958936},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}