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Title: Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}

Abstract

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

Authors:
; ;  [1];  [2];  [1];  [2];  [2]
  1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok 690041 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22590563
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH SELENIDES; EPITAXY; INTERFACES; LAYERS; SURFACES; TIN SELENIDES; TOPOLOGY; VAN DER WAALS FORCES

Citation Formats

Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}. United States: N. p., 2016. Web. doi:10.1063/1.4958936.
Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, & Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}. United States. doi:10.1063/1.4958936.
Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru, Kibirev, I. A., Saranin, A. A., Far Eastern Federal University, Vladivostok 690950, Zotov, A. V., Far Eastern Federal University, Vladivostok 690950, and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600. 2016. "Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}". United States. doi:10.1063/1.4958936.
@article{osti_22590563,
title = {Growth and characterization of van der Waals heterostuctures formed by the topological insulator Bi{sub 2}Se{sub 3} and the trivial insulator SnSe{sub 2}},
author = {Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru and Kibirev, I. A. and Saranin, A. A. and Far Eastern Federal University, Vladivostok 690950 and Zotov, A. V. and Far Eastern Federal University, Vladivostok 690950 and Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok 690600},
abstractNote = {The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.},
doi = {10.1063/1.4958936},
journal = {Applied Physics Letters},
number = 2,
volume = 109,
place = {United States},
year = 2016,
month = 7
}
  • Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi 2Se 3 has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111}more » thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50 x 10 6 m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.« less
  • Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi 2Se 3 has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111}more » thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50 x 10 6 m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.« less
  • We report a systematic study on the structural and electronic properties of Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi{sub 2}Se{sub 3} to Bi{sub 2}Te{sub 3} was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi{sub 2}Te{sub 3−x}Se{sub x} films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangularmore » terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi{sub 2}Te{sub 3−x}Se{sub x} with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi{sub 2}Te{sub 3−x}Se{sub x} thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.« less
  • High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulatormore » films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.« less
  • (SnS{sub 2}){sub x}-(SnSe{sub 2}){sub 1-x} layered crystals were grown using the vertical Bridgman technique for x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.9, 1.0. IR-spectra of these compounds were obtained using a Bruker-spectrometer. The structural properties were studied using transmission electron microscopy (TEM). The variation of the structural and optical properties was studied as a function of the composition x.