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Title: Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

Abstract

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

Authors:
; ;  [1]
  1. School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22590556
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC POTENTIAL; GALLIUM; HYDROGEN; INDIUM; MEMORY DEVICES; OPERATION; OXYGEN; PHOTONS; RANDOMNESS; SPECTROSCOPY; STOICHIOMETRY; THIN FILMS; X RADIATION; ZINC; ZINC OXIDES

Citation Formats

Kang, Dae Yun, Lee, Tae-Ho, and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing. United States: N. p., 2016. Web. doi:10.1063/1.4961311.
Kang, Dae Yun, Lee, Tae-Ho, & Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing. United States. doi:10.1063/1.4961311.
Kang, Dae Yun, Lee, Tae-Ho, and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr. Mon . "Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing". United States. doi:10.1063/1.4961311.
@article{osti_22590556,
title = {Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing},
author = {Kang, Dae Yun and Lee, Tae-Ho and Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr},
abstractNote = {The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.},
doi = {10.1063/1.4961311},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}