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Title: A comparative study of the plasmon effect in nanoelectrode THz emitters: Pulse vs. continuous-wave radiation

Abstract

Plasmonic field enhancement in terahertz (THz) generation is one of the recently arisen techniques in the THz field that has attracted considerable interest. However, the reported levels of enhancement of THz output power in the literature are significantly different from each other, from less than two times to about two orders of magnitude of enhancement in power, which implies the existence of other major limiting factors yet to be revealed. In this work, the contribution of the plasmonic effect to the power enhancement of THz emitters is revisited. We show that the carrier collection efficiency in a THz emitter with plasmonic nanostructures is more critical to the device performance than the plasmonic field enhancement itself. The strong reverse fields induced by the highly localized plasmonic carriers in the vicinity of the nanoelectrodes screen the carrier collections and seriously limit the power enhancement. This is supported by our experimental observations of the significantly enhanced power in a plasmonic nanoelectrode THz emitter in continuous-wave radiation mode, while the same device has limited enhancement with pulsed radiation. We hope that our study may provide an intuitive but practical guideline in adopting plasmonic nanostructures with an aim of enhancing the efficiency of optoelectronic devices.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. Terahertz Basic Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)
  2. Metal-Insulator Transition Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)
  3. Optical Internet Components Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22590540
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; ELECTRODES; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PERFORMANCE; PLASMONS; PULSES

Citation Formats

Moon, Kiwon, Lee, Eui Su, Lee, Il-Min, Han, Sang-Pil, Kim, Hyun-Soo, Park, Kyung Hyun, E-mail: khp@etri.re.kr, Choi, Jeongyong, and Lee, Donghun. A comparative study of the plasmon effect in nanoelectrode THz emitters: Pulse vs. continuous-wave radiation. United States: N. p., 2016. Web. doi:10.1063/1.4961305.
Moon, Kiwon, Lee, Eui Su, Lee, Il-Min, Han, Sang-Pil, Kim, Hyun-Soo, Park, Kyung Hyun, E-mail: khp@etri.re.kr, Choi, Jeongyong, & Lee, Donghun. A comparative study of the plasmon effect in nanoelectrode THz emitters: Pulse vs. continuous-wave radiation. United States. doi:10.1063/1.4961305.
Moon, Kiwon, Lee, Eui Su, Lee, Il-Min, Han, Sang-Pil, Kim, Hyun-Soo, Park, Kyung Hyun, E-mail: khp@etri.re.kr, Choi, Jeongyong, and Lee, Donghun. Mon . "A comparative study of the plasmon effect in nanoelectrode THz emitters: Pulse vs. continuous-wave radiation". United States. doi:10.1063/1.4961305.
@article{osti_22590540,
title = {A comparative study of the plasmon effect in nanoelectrode THz emitters: Pulse vs. continuous-wave radiation},
author = {Moon, Kiwon and Lee, Eui Su and Lee, Il-Min and Han, Sang-Pil and Kim, Hyun-Soo and Park, Kyung Hyun, E-mail: khp@etri.re.kr and Choi, Jeongyong and Lee, Donghun},
abstractNote = {Plasmonic field enhancement in terahertz (THz) generation is one of the recently arisen techniques in the THz field that has attracted considerable interest. However, the reported levels of enhancement of THz output power in the literature are significantly different from each other, from less than two times to about two orders of magnitude of enhancement in power, which implies the existence of other major limiting factors yet to be revealed. In this work, the contribution of the plasmonic effect to the power enhancement of THz emitters is revisited. We show that the carrier collection efficiency in a THz emitter with plasmonic nanostructures is more critical to the device performance than the plasmonic field enhancement itself. The strong reverse fields induced by the highly localized plasmonic carriers in the vicinity of the nanoelectrodes screen the carrier collections and seriously limit the power enhancement. This is supported by our experimental observations of the significantly enhanced power in a plasmonic nanoelectrode THz emitter in continuous-wave radiation mode, while the same device has limited enhancement with pulsed radiation. We hope that our study may provide an intuitive but practical guideline in adopting plasmonic nanostructures with an aim of enhancing the efficiency of optoelectronic devices.},
doi = {10.1063/1.4961305},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}