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Title: Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

Abstract

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

Authors:
; ; ;  [1]
  1. Soraa Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)
Publication Date:
OSTI Identifier:
22590534
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COOLING; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; QUANTUM WELLS; RECOMBINATION; SUBSTRATES

Citation Formats

David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., and Craven, Michael D. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling. United States: N. p., 2016. Web. doi:10.1063/1.4961491.
David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., & Craven, Michael D. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling. United States. doi:10.1063/1.4961491.
David, Aurelien, E-mail: adavid@soraa.com, Hurni, Christophe A., Young, Nathan G., and Craven, Michael D. Mon . "Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling". United States. doi:10.1063/1.4961491.
@article{osti_22590534,
title = {Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling},
author = {David, Aurelien, E-mail: adavid@soraa.com and Hurni, Christophe A. and Young, Nathan G. and Craven, Michael D.},
abstractNote = {The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.},
doi = {10.1063/1.4961491},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = {Mon Aug 22 00:00:00 EDT 2016},
month = {Mon Aug 22 00:00:00 EDT 2016}
}