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Title: GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

Abstract

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
Publication Date:
OSTI Identifier:
22590521
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ELECTRON DIFFRACTION; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOCRYSTALS; PIEZOELECTRICITY; PLASMA; RESOLUTION; SCHOTTKY BARRIER DIODES; STRAINS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Tseng, H. Y., Yang, W. C., Lee, P. Y., Lin, C. W., Cheng, Kai-Yuan, Hsieh, K. C., Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw, and Hsu, C.-H. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4961546.
Tseng, H. Y., Yang, W. C., Lee, P. Y., Lin, C. W., Cheng, Kai-Yuan, Hsieh, K. C., Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw, & Hsu, C.-H. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy. United States. doi:10.1063/1.4961546.
Tseng, H. Y., Yang, W. C., Lee, P. Y., Lin, C. W., Cheng, Kai-Yuan, Hsieh, K. C., Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw, and Hsu, C.-H. Mon . "GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy". United States. doi:10.1063/1.4961546.
@article{osti_22590521,
title = {GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy},
author = {Tseng, H. Y. and Yang, W. C. and Lee, P. Y. and Lin, C. W. and Cheng, Kai-Yuan and Hsieh, K. C. and Cheng, K. Y., E-mail: kycheng@ee.nthu.edu.tw and Hsu, C.-H.},
abstractNote = {GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.},
doi = {10.1063/1.4961546},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = {Mon Aug 22 00:00:00 EDT 2016},
month = {Mon Aug 22 00:00:00 EDT 2016}
}