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Title: P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors

Abstract

In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2, 6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF{sub 3}){sub 3}) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 10{sup 13} cm (Hz){sup 1/2} (W){sup −1}, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.

Authors:
;  [1];  [2];  [3]
  1. University of Grenoble Alpes, CEA-LITEN, Grenoble 38000 (France)
  2. IEMN, CNRS, University of Lille, Villeneuve d'Ascq 59652 (France)
  3. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)
Publication Date:
OSTI Identifier:
22590515
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AFFINITY; CHANNELING; DEPLETION LAYER; DOPED MATERIALS; ELECTRODES; EQUIPMENT; HUMIDITY; ORGANIC SEMICONDUCTORS; PERFORMANCE; PHOTODETECTORS; POLYMERS; SILICON DIODES

Citation Formats

Herrbach, J., Revaux, A., E-mail: amelie.revaux@cea.fr, Vuillaume, D., and Kahn, A.. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors. United States: N. p., 2016. Web. doi:10.1063/1.4961444.
Herrbach, J., Revaux, A., E-mail: amelie.revaux@cea.fr, Vuillaume, D., & Kahn, A.. P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors. United States. doi:10.1063/1.4961444.
Herrbach, J., Revaux, A., E-mail: amelie.revaux@cea.fr, Vuillaume, D., and Kahn, A.. Mon . "P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors". United States. doi:10.1063/1.4961444.
@article{osti_22590515,
title = {P-doped organic semiconductor: Potential replacement for PEDOT:PSS in organic photodetectors},
author = {Herrbach, J. and Revaux, A., E-mail: amelie.revaux@cea.fr and Vuillaume, D. and Kahn, A.},
abstractNote = {In this work, we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layers in organic photodetectors processed by solution. As Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is known to be sensitive to humidity, oxygen, and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2, 6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) p-doped with the dopant tris-[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF{sub 3}){sub 3}) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons into the active layer. We show similar device performance under light and the improvements of detection performance with the doped layer in comparison with PEDOT:PSS, leading to a detectivity of 1.9 × 10{sup 13} cm (Hz){sup 1/2} (W){sup −1}, competitive with silicon diodes used in imaging applications. Moreover, contrary to PEDOT:PSS, no localization of the p-doped layer is needed, leading to a diode active area defined by the patterned electrodes.},
doi = {10.1063/1.4961444},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}