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Title: Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures

Abstract

Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the Landau-Lifshitz-Gilbert equation, taking into account the magnetostriction effect, is used to explain the measured dynamics. Based on this model, conditions for optimal electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.

Authors:
; ;  [1];  [1];  [2];  [3];  [4];  [5];  [2]
  1. AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland)
  2. (Poland)
  3. Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)
  4. NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto (Finland)
  5. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)
Publication Date:
OSTI Identifier:
22590512
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC FIELDS; EQUATIONS; FERROMAGNETIC RESONANCE; MAGNETIC FIELDS; MAGNETOSTRICTION; MHZ RANGE 01-100; MINIMIZATION; PIEZOELECTRICITY; SPIN; STRAINS; SUBSTRATES; THIN FILMS; WIDTH

Citation Formats

Ziętek, Slawomir, E-mail: zietek@agh.edu.pl, Skowroński, Witold, Stobiecki, Tomasz, Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl, Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Stobiecki, Feliks, Dijken, Sebastiaan van, Barnaś, Józef, and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań. Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures. United States: N. p., 2016. Web. doi:10.1063/1.4961124.
Ziętek, Slawomir, E-mail: zietek@agh.edu.pl, Skowroński, Witold, Stobiecki, Tomasz, Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl, Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Stobiecki, Feliks, Dijken, Sebastiaan van, Barnaś, Józef, & Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań. Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures. United States. doi:10.1063/1.4961124.
Ziętek, Slawomir, E-mail: zietek@agh.edu.pl, Skowroński, Witold, Stobiecki, Tomasz, Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl, Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Stobiecki, Feliks, Dijken, Sebastiaan van, Barnaś, Józef, and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań. 2016. "Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures". United States. doi:10.1063/1.4961124.
@article{osti_22590512,
title = {Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures},
author = {Ziętek, Slawomir, E-mail: zietek@agh.edu.pl and Skowroński, Witold and Stobiecki, Tomasz and Ogrodnik, Piotr, E-mail: piotrogr@if.pw.edu.pl and Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa and Stobiecki, Feliks and Dijken, Sebastiaan van and Barnaś, Józef and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań},
abstractNote = {Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the Landau-Lifshitz-Gilbert equation, taking into account the magnetostriction effect, is used to explain the measured dynamics. Based on this model, conditions for optimal electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.},
doi = {10.1063/1.4961124},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
  • The exchange field and domain configurations were investigated in patterned polycrystalline and (100) NiO/NiFe films. The exchange field was enhanced in the polycrystalline patterns with the aspect ratio larger than one (the long edge parallel to the original easy axis). Exchange field of patterned (100) NiO/NiFe on MgO, in contrast, showed little dependence on the aspect ratio, but strong dependence on the pattern size. The exchange field increased from 8.6 Oe in the sheet film to 48.4 Oe in the 2 {mu}m patterns. The different dependence of the exchange field of polycrystalline and (100) NiO/NiFe on the pattern size canmore » be plausibly explained by the difference of the domain size in NiO, and the variation of the blocking temperature distribution. Magnetic force microscopy images of patterned polycrystalline NiO/NiFe showed two kinds of domain configurations (single-domain state and multidomain state) in the sample with the pattern size of 2 {mu}m, which may be the direct observation of various exchange paths at the interface of NiO/NiFe. {copyright} 2001 American Institute of Physics.« less
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  • We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO{sub 3}. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO{sub 3} which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.
  • We describe conventional and high-resolution transmission electron microscopy (HRTEM) characterization of the microstructure of sputtered NiFe/Cu giant magnetoresistance spin valves (Cu/FeMn/NiFe/Cu/NiFe) sandwiched between thick Nb contact layers. Six spin valves, sputtered at different temperatures, three with thin (3 nm) and three with thick (24 and 30 nm) NiFe layers, were studied. All of the spin-valve layers were smooth and continuous, consisting of columnar grains generally 20{endash}90 nm wide. In most cases, the grains had grown epitaxially from the bottom contact, through the entire multilayer, to the top contact layer. The columnar grains grew on the closest-packed planes (i.e., {l_brace}110{r_brace} planesmore » for bcc Nb and {l_brace}111{r_brace} planes for fcc Cu, FeMn, and NiFe spin-valve components). This epitaxial growth yields an apparent Kurdjumov{endash}Sachs {l_brace}111{r_brace}{sub fcc}{parallel}{l_brace}110{r_brace}{sub bcc}; {l_angle}110{r_angle}{sub fcc}{parallel}{l_angle}111{r_angle}{sub bcc} orientation relationship. However, HRTEM imaging supported by fast Fourier transform analysis reveals that in some of the columnar grains the Cu, FeMn, and NiFe layers take up a nonequilibrium bcc structure. In these cases, the bcc Cu, FeMn, and NiFe layers grow on {l_brace}110{r_brace} planes and are epitaxial with the Nb contacts for the individual grain columns. While bcc Cu has been observed elsewhere, the length scale of the nonequilibrium bcc phases reported here is an order of magnitude greater than previously observed. {copyright} {ital 1999 American Institute of Physics.}« less
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