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Title: Internal additive noise effects in stochastic resonance using organic field effect transistor

Abstract

Stochastic resonance phenomenon was observed in organic field effect transistor using poly(3-hexylthiophene), which enhances performance of signal transmission with application of noise. The enhancement of correlation coefficient between the input and output signals was low, and the variation of correlation coefficient was not remarkable with respect to the intensity of external noise, which was due to the existence of internal additive noise following the nonlinear threshold response. In other words, internal additive noise plays a positive role on the capability of approximately constant signal transmission regardless of noise intensity, which can be said “homeostatic” behavior or “noise robustness” against external noise. Furthermore, internal additive noise causes emergence of the stochastic resonance effect even on the threshold unit without internal additive noise on which the correlation coefficient usually decreases monotonically.

Authors:
;  [1];  [2]
  1. Division of Molecular Science, Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515 (Japan)
  2. KOOROGI LLC, 6-1585-1-B Sakaino-cho, Kiryu, Gunma 376-0002 (Japan)
Publication Date:
OSTI Identifier:
22590507
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADDITIVES; CORRELATIONS; FIELD EFFECT TRANSISTORS; NOISE; NONLINEAR PROBLEMS; PERFORMANCE; RESONANCE; SIGNALS; STOCHASTIC PROCESSES

Citation Formats

Suzuki, Yoshiharu, Asakawa, Naoki, and Matsubara, Kiyohiko. Internal additive noise effects in stochastic resonance using organic field effect transistor. United States: N. p., 2016. Web. doi:10.1063/1.4962126.
Suzuki, Yoshiharu, Asakawa, Naoki, & Matsubara, Kiyohiko. Internal additive noise effects in stochastic resonance using organic field effect transistor. United States. doi:10.1063/1.4962126.
Suzuki, Yoshiharu, Asakawa, Naoki, and Matsubara, Kiyohiko. 2016. "Internal additive noise effects in stochastic resonance using organic field effect transistor". United States. doi:10.1063/1.4962126.
@article{osti_22590507,
title = {Internal additive noise effects in stochastic resonance using organic field effect transistor},
author = {Suzuki, Yoshiharu and Asakawa, Naoki and Matsubara, Kiyohiko},
abstractNote = {Stochastic resonance phenomenon was observed in organic field effect transistor using poly(3-hexylthiophene), which enhances performance of signal transmission with application of noise. The enhancement of correlation coefficient between the input and output signals was low, and the variation of correlation coefficient was not remarkable with respect to the intensity of external noise, which was due to the existence of internal additive noise following the nonlinear threshold response. In other words, internal additive noise plays a positive role on the capability of approximately constant signal transmission regardless of noise intensity, which can be said “homeostatic” behavior or “noise robustness” against external noise. Furthermore, internal additive noise causes emergence of the stochastic resonance effect even on the threshold unit without internal additive noise on which the correlation coefficient usually decreases monotonically.},
doi = {10.1063/1.4962126},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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