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Title: Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}

Abstract

Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.

Authors:
 [1];  [2];  [3]; ;  [1];  [3];  [4];  [5]
  1. Department of Physics, Tohoku University, Sendai 980-8578 (Japan)
  2. WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  3. (Japan)
  4. Department of Physics, Kyoto Sangyo University, Kyoto 603-8555 (Japan)
  5. Institute of Physics II, University of Cologne, Köln 50937 (Germany)
Publication Date:
OSTI Identifier:
22590490
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONIC EQUIPMENT; INTERFACES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; POTENTIALS; RESOLUTION; SURFACES; TITANIUM SULFIDES; TOPOLOGY; WORK FUNCTIONS

Citation Formats

Takane, Daichi, Souma, Seigo, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Sato, Takafumi, Takahashi, Takashi, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Segawa, Kouji, and Ando, Yoichi. Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}. United States: N. p., 2016. Web. doi:10.1063/1.4961987.
Takane, Daichi, Souma, Seigo, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Sato, Takafumi, Takahashi, Takashi, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Segawa, Kouji, & Ando, Yoichi. Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}. United States. doi:10.1063/1.4961987.
Takane, Daichi, Souma, Seigo, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Sato, Takafumi, Takahashi, Takashi, Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Segawa, Kouji, and Ando, Yoichi. 2016. "Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}". United States. doi:10.1063/1.4961987.
@article{osti_22590490,
title = {Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}},
author = {Takane, Daichi and Souma, Seigo and Center for Spintronics Research Network, Tohoku University, Sendai 980-8577 and Sato, Takafumi and Takahashi, Takashi and Center for Spintronics Research Network, Tohoku University, Sendai 980-8577 and Segawa, Kouji and Ando, Yoichi},
abstractNote = {Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.},
doi = {10.1063/1.4961987},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = 2016,
month = 8
}