Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}
- Department of Physics, Tohoku University, Sendai 980-8578 (Japan)
- WPI Research Center, Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
- Department of Physics, Kyoto Sangyo University, Kyoto 603-8555 (Japan)
- Institute of Physics II, University of Cologne, Köln 50937 (Germany)
Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as a useful guide for developing TI-based electronic devices.
- OSTI ID:
- 22590490
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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