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Title: III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Abstract

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

Authors:
; ; ; ; ; ;  [1]; ; ; ;  [2]
  1. imec, Kapeldreef 75, 3001 Heverlee (Belgium)
  2. Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)
Publication Date:
OSTI Identifier:
22590488
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DISLOCATIONS; GALLIUM ARSENIDES; INDIUM; INDIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRAPPING; VAPOR PHASE EPITAXY; VAPORS

Citation Formats

Kunert, B., Guo, W., Mols, Y., Pantouvaki, M., Van Campenhout, J., Langer, R., Barla, K., Tian, B., Wang, Z., Shi, Y., and Van Thourhout, D.. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. United States: N. p., 2016. Web. doi:10.1063/1.4961936.
Kunert, B., Guo, W., Mols, Y., Pantouvaki, M., Van Campenhout, J., Langer, R., Barla, K., Tian, B., Wang, Z., Shi, Y., & Van Thourhout, D.. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. United States. doi:10.1063/1.4961936.
Kunert, B., Guo, W., Mols, Y., Pantouvaki, M., Van Campenhout, J., Langer, R., Barla, K., Tian, B., Wang, Z., Shi, Y., and Van Thourhout, D.. 2016. "III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate". United States. doi:10.1063/1.4961936.
@article{osti_22590488,
title = {III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate},
author = {Kunert, B. and Guo, W. and Mols, Y. and Pantouvaki, M. and Van Campenhout, J. and Langer, R. and Barla, K. and Tian, B. and Wang, Z. and Shi, Y. and Van Thourhout, D.},
abstractNote = {We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.},
doi = {10.1063/1.4961936},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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