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Title: Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms

Abstract

Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 3.5}Dy{sub 0.5}N film grown by molecular-beam epitaxy. Reflective high energy electron diffraction and transmission electron microscopy demonstrate the high quality of the film. We have used a scaling involving multiple competing scattering mechanisms to distinguish variations of contributions to the AHE by heavily doped Dy. The scaling analysis revealed that the heavily doped Dy has dramatically modified the skew scattering part of the AHE in Mn{sub 4}N and Mn{sub 3.5}Dy{sub 0.5}N has a totally different scattering mechanism from an undoped film.

Authors:
; ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22590483
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRON DIFFRACTION; FILMS; HALL EFFECT; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms. United States: N. p., 2016. Web. doi:10.1063/1.4961691.
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., & Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms. United States. doi:10.1063/1.4961691.
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. 2016. "Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms". United States. doi:10.1063/1.4961691.
@article{osti_22590483,
title = {Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms},
author = {Meng, M. and Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn and Zhou, W. Q. and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn},
abstractNote = {Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 3.5}Dy{sub 0.5}N film grown by molecular-beam epitaxy. Reflective high energy electron diffraction and transmission electron microscopy demonstrate the high quality of the film. We have used a scaling involving multiple competing scattering mechanisms to distinguish variations of contributions to the AHE by heavily doped Dy. The scaling analysis revealed that the heavily doped Dy has dramatically modified the skew scattering part of the AHE in Mn{sub 4}N and Mn{sub 3.5}Dy{sub 0.5}N has a totally different scattering mechanism from an undoped film.},
doi = {10.1063/1.4961691},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
  • We have measured the mixed-state Hall effect in superconducting HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} thin films. We found that the Hall resistivity {rho}{sub xy} shows a double sign reversal in low fields, then shifts to positive without changing the general shape in higher fields. At the higher field region, the Hall conductivity {rho}{sub xy} is observed to be the sum of two terms, C{sub 1}/H and C{sub 2}H, where C{sub 1} and C{sub 2} are field independent. The scaling behavior between {sigma}{sub xy} and {rho}{sub xx} (longitudinal resistivity) shows a strong dependence on fields. The scaling exponent {beta} in {rho}{sub xy}=A{rho}{submore » xx}{sup {beta}} increases from 1.5{plus_minus}0.1 to 1.9{plus_minus}0.1 as field increases from 1 to 5.5 T. The field dependence of tangent of the Hall angle is linear only in the flux-flow regime, different from Bi- and Tl-based cuprates. {copyright} {ital 1997} {ital The American Physical Society}« less
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  • We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.
  • Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σ{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρ{sub AH}=a′ρ{sub xx0}+bρ{sub xx}{sup 2} and σ{sub AH}∝σ{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.