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Title: Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms

Abstract

Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 3.5}Dy{sub 0.5}N film grown by molecular-beam epitaxy. Reflective high energy electron diffraction and transmission electron microscopy demonstrate the high quality of the film. We have used a scaling involving multiple competing scattering mechanisms to distinguish variations of contributions to the AHE by heavily doped Dy. The scaling analysis revealed that the heavily doped Dy has dramatically modified the skew scattering part of the AHE in Mn{sub 4}N and Mn{sub 3.5}Dy{sub 0.5}N has a totally different scattering mechanism from an undoped film.

Authors:
; ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22590483
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRON DIFFRACTION; FILMS; HALL EFFECT; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms. United States: N. p., 2016. Web. doi:10.1063/1.4961691.
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., & Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms. United States. doi:10.1063/1.4961691.
Meng, M., Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn, Zhou, W. Q., and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn. Mon . "Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms". United States. doi:10.1063/1.4961691.
@article{osti_22590483,
title = {Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn{sub 3.5}Dy{sub 0.5}N involving multiple competing scattering mechanisms},
author = {Meng, M. and Wu, S. X., E-mail: wushx3@mail.sysu.edu.cn and Zhou, W. Q. and Li, S. W., E-mail: wushx3@mail.sysu.edu.cn},
abstractNote = {Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 3.5}Dy{sub 0.5}N film grown by molecular-beam epitaxy. Reflective high energy electron diffraction and transmission electron microscopy demonstrate the high quality of the film. We have used a scaling involving multiple competing scattering mechanisms to distinguish variations of contributions to the AHE by heavily doped Dy. The scaling analysis revealed that the heavily doped Dy has dramatically modified the skew scattering part of the AHE in Mn{sub 4}N and Mn{sub 3.5}Dy{sub 0.5}N has a totally different scattering mechanism from an undoped film.},
doi = {10.1063/1.4961691},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = {Mon Aug 22 00:00:00 EDT 2016},
month = {Mon Aug 22 00:00:00 EDT 2016}
}
  • Anomalous Hall effect (AHE) has been studied for ferrimagnetic antiperovskite Mn{sub 4−x}Dy{sub x}N films grown by molecular-beam epitaxy. The introduction of Dy changes the AHE dramatically, even changes its sign, while the variations in magnetization are negligible. Two sign reversals of the AHE (negative-positive-negative) are ascribed to the variation of charge carriers as a result of Fermi surface reconstruction. We further demonstrate that the AHE current J{sub AH} is dissipationless (independent of the scattering rate), by confirming that anomalous Hall conductivity, σ{sub AH}, is proportional to the carrier density n at 5 K. Our study may provide a route to furthermore » utilize antiperovskite manganese nitrides in spintronics.« less
  • We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.
  • Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σ{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρ{sub AH}=a′ρ{sub xx0}+bρ{sub xx}{sup 2} and σ{sub AH}∝σ{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.
  • We report detailed investigations of the structure, magnetic properties, electronic transport, and specific heat in Mn-based antiperovskite compounds Mn{sub 3}Cu{sub 0.5}Zn{sub 0.5}N. Most strikingly, there are several fascinating features: (i) The magnetoresistance at 30 kOe (40 kOe) exceeds ∼1% (∼2%) over a temperature span of ∼70 K (∼25 K) from 5 to 140 K; (ii) magnetoresistance fluctuates at temperatures of 100–200 K, including an obvious sign reversal from negative to positive at ∼140 K. Analysis of the specific heat reveals that the magnetoresistance reversal may originate from the reconstruction of the Fermi surface accompanying an antiferromagnetic-ferromagnetic transition.
  • We report on the type and density of charge carriers obtained from Hall-effect measurements in the three different magnetic phases of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} . The field dependence of the Hall resistivity has two contributions of opposite sign: one is related to skew scattering and dominates in low magnetic fields; the other one is due to the Lorentz-force contribution which prevails at higher fields. This second contribution corresponds to a temperature-independent carrier density in the order of 0.8 holes per chemical unit cell. The skew-scattering contribution is related to the susceptibility of the material and is maximum at themore » transition temperature from the ferro- to the antiferromagnetic state. {copyright} {ital 1997} {ital The American Physical Society}« less