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Title: Sequential control of step-bunching during graphene growth on SiC (0001)

Abstract

We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.

Authors:
;  [1]; ; ;  [2]
  1. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan)
  2. Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22590477
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONTROL; GRAPHENE; HEATING RATE; SILICON CARBIDES; SUBSTRATES

Citation Formats

Bao, Jianfeng, Kusunoki, Michiko, Yasui, Osamu, Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp, and Matsuda, Keita. Sequential control of step-bunching during graphene growth on SiC (0001). United States: N. p., 2016. Web. doi:10.1063/1.4961630.
Bao, Jianfeng, Kusunoki, Michiko, Yasui, Osamu, Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp, & Matsuda, Keita. Sequential control of step-bunching during graphene growth on SiC (0001). United States. doi:10.1063/1.4961630.
Bao, Jianfeng, Kusunoki, Michiko, Yasui, Osamu, Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp, and Matsuda, Keita. 2016. "Sequential control of step-bunching during graphene growth on SiC (0001)". United States. doi:10.1063/1.4961630.
@article{osti_22590477,
title = {Sequential control of step-bunching during graphene growth on SiC (0001)},
author = {Bao, Jianfeng and Kusunoki, Michiko and Yasui, Osamu and Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp and Matsuda, Keita},
abstractNote = {We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.},
doi = {10.1063/1.4961630},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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