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Title: Hole transport in c-plane InGaN-based green laser diodes

Abstract

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2]
  1. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22590465
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENT DENSITY; DOPED MATERIALS; HOLES; LASERS; LAYERS; QUANTUM WELLS; SILICON; SIMULATION

Citation Formats

Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. Hole transport in c-plane InGaN-based green laser diodes. United States: N. p., 2016. Web. doi:10.1063/1.4961377.
Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, & School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. Hole transport in c-plane InGaN-based green laser diodes. United States. doi:10.1063/1.4961377.
Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. Mon . "Hole transport in c-plane InGaN-based green laser diodes". United States. doi:10.1063/1.4961377.
@article{osti_22590465,
title = {Hole transport in c-plane InGaN-based green laser diodes},
author = {Cheng, Yang and Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn and Tian, Aiqin and Zhang, Feng and Feng, Meixin and Hu, Weiwei and Zhang, Shuming and Ikeda, Masao and Li, Deyao and Zhang, Liqun and Yang, Hui and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123},
abstractNote = {Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.},
doi = {10.1063/1.4961377},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = {Mon Aug 29 00:00:00 EDT 2016},
month = {Mon Aug 29 00:00:00 EDT 2016}
}