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Title: Hole transport in c-plane InGaN-based green laser diodes

Abstract

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2]
  1. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22590465
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENT DENSITY; DOPED MATERIALS; HOLES; LASERS; LAYERS; QUANTUM WELLS; SILICON; SIMULATION

Citation Formats

Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. Hole transport in c-plane InGaN-based green laser diodes. United States: N. p., 2016. Web. doi:10.1063/1.4961377.
Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, & School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. Hole transport in c-plane InGaN-based green laser diodes. United States. doi:10.1063/1.4961377.
Cheng, Yang, Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn, Tian, Aiqin, Zhang, Feng, Feng, Meixin, Hu, Weiwei, Zhang, Shuming, Ikeda, Masao, Li, Deyao, Zhang, Liqun, Yang, Hui, and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123. 2016. "Hole transport in c-plane InGaN-based green laser diodes". United States. doi:10.1063/1.4961377.
@article{osti_22590465,
title = {Hole transport in c-plane InGaN-based green laser diodes},
author = {Cheng, Yang and Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn and Tian, Aiqin and Zhang, Feng and Feng, Meixin and Hu, Weiwei and Zhang, Shuming and Ikeda, Masao and Li, Deyao and Zhang, Liqun and Yang, Hui and School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123},
abstractNote = {Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.},
doi = {10.1063/1.4961377},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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  • The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less