Fabrication and characterization of powder metallurgy tantalum components prepared by high compaction pressure technique
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141 (Korea, Republic of)
- Korea Atomic Energy Research Institute, 111 Daedeok-daero, Yuseong-gu, Daejeon 34057 (Korea, Republic of)
- Samsung Electronics, 129 Samsung-ro, Youngtong-gu, Suwon 16677 (Korea, Republic of)
The present study has investigated the consolidation behaviors of tantalum powders during compaction and sintering, and the characteristics of sintered components. For die compaction, the densification behaviors of the powders are simulated by finite element analyses based on the yield function proposed by Shima and Oyane. Accordingly, the green density distribution for coarser particles is predicted to be more uniform because they exhibits higher initial relative tap density owing to lower interparticle friction. It is also found that cold isostatic pressing is capable of producing higher dense compacts compared to the die pressing. However, unlike the compaction behavior, the sintered density of smaller particles is found to be higher than those of coarser ones owing to their higher specific surface area. The maximum sintered density was found to be 0.96 of theoretical density where smaller particles were pressed isostatically at 400 MPa followed by sintering at 2000 °C. Moreover, the effects of processing conditions on grain size and texture were also investigated. The average grain size of the sintered specimen is 30.29 μm and its texture is less than 2 times random intensity. Consequently, it is concluded that the higher pressure compaction technique is beneficial to produce high dense and texture-free tantalum components compared to hot pressing and spark plasma sintering. - Highlights: • Higher Ta density is obtained from higher pressure and sintering temperature. • High compaction method enables P/M Ta to achieve the density of 16.00 g·cm{sup −3}. • A P/M Ta component with fine microstructure and random orientation is developed.
- OSTI ID:
- 22587140
- Journal Information:
- Materials Characterization, Vol. 114; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
- Country of Publication:
- United States
- Language:
- English
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