Electrical and structure properties for the alloy system Ce{sub x}La{sub 1−x}O{sub y} nanostructure thin films
Highlights: • Glassy Ce{sub x}La{sub 1−x}O{sub y} nanostructure films were grown on Si(1 0 0) substrate using the sol–gel method. • G{sub p} = ωϵ{sub 0}ϵ′ tan(δ) was calculated at different temperatures. • Electrical and structural the Ce{sub x}La{sub 1−x}O{sub y} samples were studied. • The conductivity-temperature study shows that the compound obeys the Arrhenius law. - Abstract: The Ce{sub x}La{sub 1−x}O{sub y} samples are synthesized, characterized and their electrical properties are reported at different molar ratios in the frequency range of 10{sup −1}–10{sup +5} Hz. Ac conductivity and permittivity data are analyzed by using conductivity formalism. The values of capacitance and tan(δ) were recorded with respect to different frequencies and temperatures. X-ray diffraction (XRD) patterns of the films show that the films posses crystalline phases. Surface morphology of the films is analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) analyses reveal that elemental composition is in right stoichiometry. Electrical characterizations of the Ce{sub x}La{sub 1−x}O{sub y} samples were done by capacitance–voltage (C–V) and current density–voltage (J–V) measurements of MOS structures. Investigation showed high value of k = 44.80 and low leakage current (∼1 × 10{sup −5} A/cm{sup 2}) of the Ce{sub 0.4}La{sub 0.6}O{sub y} film.
- OSTI ID:
- 22584287
- Journal Information:
- Materials Research Bulletin, Vol. 74; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOY SYSTEMS
ATOMIC FORCE MICROSCOPY
CAPACITANCE
CERIUM OXIDES
CURRENT DENSITY
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
LANTHANUM OXIDES
LEAKAGE CURRENT
MORPHOLOGY
NANOSTRUCTURES
PERMITTIVITY
SCANNING ELECTRON MICROSCOPY
SILICON OXIDES
SOL-GEL PROCESS
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY