Photoluminescence studies of high-efficient red-emitting K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphor for NUV LED
- School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China)
- College of Chemistry and Chemical Engineering, Hunan Normal University, Changsha, Hunan 410081 (China)
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Highlights: • Novel K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} red phosphors were prepared by solid-state method. • Phosphors exhibit strong red light under NUV excitation with quantum efficiency of 70.5 %. • Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. • The red LED prototype was fabricated with KYWP:Eu{sup 3+} phosphor and InGaN chip. - Abstract: A series of high-efficient red-emitting phosphors K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} have been successfully synthesized by conventional solid-state reaction, and its photoluminescence (PL) properties have been investigated. The phosphors can be excited efficiently by NUV light, then exhibit strong red emission with quantum efficiency of 70.5%. The concentration quenching takes place at relatively high concentration of Eu{sup 3+} (x = 0.70), which is further confirmed by the variation of decay curves of the entitled phosphors. Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. The phosphor exhibits good thermal stability (92.5% at 100 °C and 84.1% at 180 °C). The red LED prototype fabricated by opyimized-composition K{sub 2}Y(WO{sub 4})(PO{sub 4}):0.70Eu{sup 3+} phosphor and 395 nm-emitting InGaN chips exhibit bright red emission. The results indicate that the K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphors are promising red phosphors for NUV LED.
- OSTI ID:
- 22584265
- Journal Information:
- Materials Research Bulletin, Vol. 73; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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