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Title: Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

Abstract

Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

Authors:
;  [1]; ;  [1];  [2]
  1. Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine)
  2. International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)
Publication Date:
OSTI Identifier:
22584243
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 72; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CONCENTRATION RATIO; CRYSTAL DEFECTS; EFFECTIVE MASS; ELECTRON MOBILITY; INDIUM ANTIMONIDES; LANDE FACTOR; LATTICE PARAMETERS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; PHASE TRANSFORMATIONS; PHONONS; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; SHUBNIKOV-DE HAAS EFFECT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; WHISKERS

Citation Formats

Druzhinin, A., E-mail: druzh@polynet.lviv.ua, International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Ostrovskii, I., Khoverko, Yu., International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Liakh-Kaguy, N., Khytruk, I., and Rogacki, K. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.08.016.
Druzhinin, A., E-mail: druzh@polynet.lviv.ua, International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Ostrovskii, I., Khoverko, Yu., International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Liakh-Kaguy, N., Khytruk, I., & Rogacki, K. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures. United States. https://doi.org/10.1016/J.MATERRESBULL.2015.08.016
Druzhinin, A., E-mail: druzh@polynet.lviv.ua, International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Ostrovskii, I., Khoverko, Yu., International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw, Liakh-Kaguy, N., Khytruk, I., and Rogacki, K. 2015. "Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures". United States. https://doi.org/10.1016/J.MATERRESBULL.2015.08.016.
@article{osti_22584243,
title = {Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures},
author = {Druzhinin, A., E-mail: druzh@polynet.lviv.ua and International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw and Ostrovskii, I. and Khoverko, Yu. and International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw and Liakh-Kaguy, N. and Khytruk, I. and Rogacki, K.},
abstractNote = {Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.},
doi = {10.1016/J.MATERRESBULL.2015.08.016},
url = {https://www.osti.gov/biblio/22584243}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 72,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}