Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells
In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.
- OSTI ID:
- 22584123
- Journal Information:
- Journal of Solid State Chemistry, Vol. 238; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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