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Title: Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

Abstract

Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crucial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.

Authors:
; ; ; ;  [1]
  1. Center for Computational Science, Korea Institute of Science and Technology, Seoul, 136791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22584020
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ELECTRONS; GRAPHENE; NANOSTRUCTURES; ORTHORHOMBIC LATTICES; SEMICONDUCTOR MATERIALS; STRAINS

Citation Formats

Zhang, Z. Y., Zhang, J. C., Wang, Y. H., Xue, D. S., Si, M. S., E-mail: sims@lzu.edu.cn, and Cao, H. N. Orientation and strain modulated electronic structures in puckered arsenene nanoribbons. United States: N. p., 2015. Web. doi:10.1063/1.4922329.
Zhang, Z. Y., Zhang, J. C., Wang, Y. H., Xue, D. S., Si, M. S., E-mail: sims@lzu.edu.cn, & Cao, H. N. Orientation and strain modulated electronic structures in puckered arsenene nanoribbons. United States. doi:10.1063/1.4922329.
Zhang, Z. Y., Zhang, J. C., Wang, Y. H., Xue, D. S., Si, M. S., E-mail: sims@lzu.edu.cn, and Cao, H. N. Mon . "Orientation and strain modulated electronic structures in puckered arsenene nanoribbons". United States. doi:10.1063/1.4922329.
@article{osti_22584020,
title = {Orientation and strain modulated electronic structures in puckered arsenene nanoribbons},
author = {Zhang, Z. Y. and Zhang, J. C. and Wang, Y. H. and Xue, D. S. and Si, M. S., E-mail: sims@lzu.edu.cn and Cao, H. N.},
abstractNote = {Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crucial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.},
doi = {10.1063/1.4922329},
journal = {AIP Advances},
issn = {2158-3226},
number = 6,
volume = 5,
place = {United States},
year = {2015},
month = {6}
}