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Title: Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

Abstract

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due tomore » the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

Authors:
;  [1];  [2];  [3];  [1]
  1. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)
  2. Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of)
  3. Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22581635
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 82; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; CRYSTAL GROWTH; CRYSTALS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTROCHEMISTRY; ELECTRODEPOSITION; GRAIN SIZE; HYDROTHERMAL SYNTHESIS; LAYERS; NANOSTRUCTURES; SAPPHIRE; SEEDS; THIN FILMS; THREE-DIMENSIONAL LATTICES; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Son, Hyo-Soo, Choi, Nak-Jung, Kim, Kyoung-Bo, Kim, Moojin, and Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition. United States: N. p., 2016. Web. doi:10.1016/J.MATERRESBULL.2016.02.004.
Son, Hyo-Soo, Choi, Nak-Jung, Kim, Kyoung-Bo, Kim, Moojin, & Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition. United States. doi:10.1016/J.MATERRESBULL.2016.02.004.
Son, Hyo-Soo, Choi, Nak-Jung, Kim, Kyoung-Bo, Kim, Moojin, and Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr. Sat . "Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition". United States. doi:10.1016/J.MATERRESBULL.2016.02.004.
@article{osti_22581635,
title = {Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition},
author = {Son, Hyo-Soo and Choi, Nak-Jung and Kim, Kyoung-Bo and Kim, Moojin and Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr},
abstractNote = {Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.},
doi = {10.1016/J.MATERRESBULL.2016.02.004},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 82,
place = {United States},
year = {2016},
month = {10}
}