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Title: Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

Abstract

Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similar to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.

Authors:
 [1];  [2];  [1];  [2]; ;  [1];  [2]
  1. CNRS, ICMCB, UPR 9048, F-33600 Pessac (France)
  2. (France)
Publication Date:
OSTI Identifier:
22581619
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 81; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; CERAMICS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FERRATES; HYSTERESIS; IMPEDANCE; LAYERS; MAGNETIC PROPERTIES; NEODYMIUM COMPOUNDS; NIOBATES; SILICON OXIDES; SPECTROSCOPY; SPUTTERING; SUBSTRATES; SYNTHESIS; TETRAGONAL LATTICES; THIN FILMS; TITANIUM OXIDES; TUNGSTEN BRONZE

Citation Formats

Bodeux, Romain, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Maglione, Mario, Josse, Michaël, and Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac. Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates. United States: N. p., 2016. Web. doi:10.1016/J.MATERRESBULL.2016.04.027.
Bodeux, Romain, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Maglione, Mario, Josse, Michaël, & Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac. Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates. United States. doi:10.1016/J.MATERRESBULL.2016.04.027.
Bodeux, Romain, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, Maglione, Mario, Josse, Michaël, and Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac. 2016. "Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates". United States. doi:10.1016/J.MATERRESBULL.2016.04.027.
@article{osti_22581619,
title = {Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates},
author = {Bodeux, Romain and Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac and Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr and Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac and Maglione, Mario and Josse, Michaël and Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac},
abstractNote = {Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similar to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.},
doi = {10.1016/J.MATERRESBULL.2016.04.027},
journal = {Materials Research Bulletin},
number = ,
volume = 81,
place = {United States},
year = 2016,
month = 9
}
  • A cosputtering method was used to deposit BiFeO{sub 3} thin films on Pt/Ti/SiO{sub 2}/Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe{sup 2+} and Fe{sup 3+} ions were found to coexist in the film. The leakage current density is as low as 10{sup -3} A/cm{sup 2} at 120 kV/cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37 {mu}C/cm{sup 2} and a saturated ferromagnetic loop with saturation magnetization of 21 emu/cm{sup 3} at room temperature.
  • A resistance decrease of about five orders of magnitude around 90{endash}160 K has been observed in Xe-doped YBa{sub 1.5}Cu{sub 6.3}O{sub x}, Xe-doped YBa{sub 1.5}Cu{sub 3.7}O{sub x}, and Xe-doped YBa{sub 1.5}Cu{sub 2.2}O{sub x} thin films. These films were deposited on unheated (100)Si substrates by Xe ion-beam sputtering and annealed in an oxygen flow at 100{endash}500{degree}C for 24 h. The resistance decrease was measured reproducibly for all samples except 500{degree}C-annealed films even after exposure to atmosphere for two years. The x-ray diffraction pattern study revealed that the films mainly contain YBa{sub 2}Cu{sub 3}O{sub 6.8} lattices having compressed a-b lattice planes and anmore » expanded c-axis bond length and YBa{sub 2}Cu{sub 3}O{sub 6} lattices. The presence of xenon-oxygen bonds in the films was determined by x-ray photoelectron spectroscopy. The resistivities first increased with decreasing temperature, exhibited a maximum value at 200{endash}260 K, then exponentially decreased and reached very low resistivities at 95{endash}130 K. {copyright} {ital 1997} {ital The American Physical Society}« less
  • Four epitaxial ScN(001) thin films were successfully deposited on MgO(001) substrates by dc reactive magnetron sputtering at 2, 5, 10, and 20 mTorr in an Ar/N2 ambient atmosphere at 650 °C. The microstructure of the resultant films was analyzed by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Electrical resistivity, electron mobility and concentration were measured using the room temperature Hall technique, and temperature dependent in-plain measurements of the thermoelectric properties of the ScN thin films were performed. The surface morphology and film crystallinity significantly degrade with increasing deposition pressure. The ScN thin film deposited at 20 mTorr exhibitsmore » the presence of <221> oriented secondary grains resulting in decreased electric properties and a low thermoelectric power factor of 0.5 W/m-K² at 800 K. ScN thin films grown at 5 and 10 mTorr are single crystalline, yielding the power factor of approximately 2.5 W/m-K² at 800 K. The deposition performed at 2 mTorr produces the highest quality ScN thin film with the electron mobility of 98 cm² V⁻¹ s⁻¹ and the power factor of 3.3 W/m-K² at 800 K.« less
  • The lengths and spacings of twins in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films deposited onto MgO substrates have been measured by transmission electron microscopy as a function of film thickness {ital t}, for {ital t} ranging from 50 to 1400 nm. The twin length is linear in {ital t}, while the twin spacing follows a {ital t}{sup 1/2} dependence. This form for the twin spacing is consistent with the prediction of a simple free energy expression for the twinning transformation.