Large linear magnetoresistance in topological crystalline insulator Pb{sub 0.6}Sn{sub 0.4}Te
- New Chemistry Unit (India)
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064 (India)
Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb{sub 0.6}Sn{sub 0.4}Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb{sub 0.6}Sn{sub 0.4}Te is mainly governed by the spatial fluctuation of the carrier mobility.
- OSTI ID:
- 22577732
- Journal Information:
- Journal of Solid State Chemistry, Vol. 233; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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