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Title: Stimulated emission on impurity – band optical transitions in semiconductors

Abstract

This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)

Authors:
;  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22551301
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 45; Journal Issue: 2; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON DIOXIDE LASERS; EFFECTIVE MASS; ELECTRON GAS; EXCITATION; GAIN; GALLIUM ARSENIDES; IMPURITIES; MEV RANGE; PHOTONS; POPULATION INVERSION; POWER DENSITY; PUMPING; SEMICONDUCTOR MATERIALS; STIMULATED EMISSION; THZ RANGE; TUNNEL EFFECT

Citation Formats

Bekin, N A, and Shastin, V N. Stimulated emission on impurity – band optical transitions in semiconductors. United States: N. p., 2015. Web. doi:10.1070/QE2015V045N02ABEH015530.
Bekin, N A, & Shastin, V N. Stimulated emission on impurity – band optical transitions in semiconductors. United States. doi:10.1070/QE2015V045N02ABEH015530.
Bekin, N A, and Shastin, V N. Sat . "Stimulated emission on impurity – band optical transitions in semiconductors". United States. doi:10.1070/QE2015V045N02ABEH015530.
@article{osti_22551301,
title = {Stimulated emission on impurity – band optical transitions in semiconductors},
author = {Bekin, N A and Shastin, V N},
abstractNote = {This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)},
doi = {10.1070/QE2015V045N02ABEH015530},
journal = {Quantum Electronics (Woodbury, N.Y.)},
number = 2,
volume = 45,
place = {United States},
year = {Sat Feb 28 00:00:00 EST 2015},
month = {Sat Feb 28 00:00:00 EST 2015}
}