High power, 1060-nm diode laser with an asymmetric hetero-waveguide

Journal Article · Fri Jul 31 00:00:00 EDT 2015 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2015V045N07ABEH015680· OSTI ID:22551214

Li, T; Zhang, Yu ^[1]; Hao, E ^[2]

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1. National Key Lab. On High Power Diode Laser,Changchun University of Science and Technology,Changchun, 130033 (China)
2. College of Physics, Jilin University, Changchun, 130021 (China)

By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency. (lasers)

• OSTI ID: 22551214
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 45, Issue 7; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASYMMETRY
CARRIERS
CONFINEMENT
DIODE-PUMPED SOLID STATE LASERS
ELECTRIC POTENTIAL
EPITAXY
OPTIMIZATION
POWER GENERATION
QUANTUM WELLS
WAVEGUIDES
WAVELENGTHS