A new set-up for in-situ probing of radiation effects in materials and electronic devices
- Instituto Superior Tecnico - IST, Campus Tecnologico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS (Portugal)
- Portugal
The micro-probe facility installed at the Van de Graff accelerator at CTN/IST permits simultaneous measurements of Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Emission (PIXE) and Iono-Luminescence (IL). Here we present a recent up-grade of the measurement chamber allowing improved optical sensitivity in IL measurements and opening the possibility to perform simultaneously electrical measurements. Combinations of all these characterization techniques make this setup a powerful tool to characterize and modify different materials with spatial resolution. In particular, it can be used to study radiation effects in different materials and electronic devices in-situ. IL is a luminescence technique that uses the ion beam as the excitation source. Compared with other luminescence techniques with spatial resolution like Cathodoluminescence, this technique has the advantage to probe deeper regions of the sample, several microns below the surface. The same ion beam used to produce luminescence, can create a high density of defects, in a controllable way and the new set-up allows monitoring optical and electrical properties in realtime. In this work we combine IL with I-V curve measurements to assess the response of Ga{sub 2}O{sub 3} and GaN to proton irradiation. Ga{sub 2}O{sub 3} and GaN are emerging materials for applications in high power electronics and are considered for radiation resistant electronics. We will present a systematic study of the changes in IL and conductivity in Ga{sub 2}O{sub 3} and GaN samples with the energy of the ion beam and with the time of exposure. In particular, it was observed that during the irradiation some luminescence bands related with intrinsic point defects decrease while other new bands appear. Simulations using the SRIM code were used to determine the depth profiles of ionization and displacement events, helping to correlate the optical and electrical response of the materials with certain radiation effects. These studies show the potentialities of measuring simultaneously IL and electrical conductivity and how these two characterization techniques can work as a sensitive tool to detect and quantify radiation effects. (authors)
- Research Organization:
- Institute of Electrical and Electronics Engineers - IEEE, 3 Park Avenue, 17th Floor, New York, N.Y. 10016-5997 (United States)
- OSTI ID:
- 22531391
- Report Number(s):
- ANIMMA-2015-IO-345; TRN: US16V0399102332
- Resource Relation:
- Conference: ANIMMA 2015: 4. International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Lisboa (Portugal), 20-24 Apr 2015; Other Information: Country of input: France
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CATHODOLUMINESCENCE
COMPUTERIZED SIMULATION
ELECTRIC CONDUCTIVITY
ELECTRONIC EQUIPMENT
EXCITATION
GALLIUM NITRIDES
GALLIUM OXIDES
ION BEAMS
IRRADIATION
PIXE ANALYSIS
POINT DEFECTS
PROBES
PROTONS
RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
S CODES
SENSITIVITY
SPATIAL RESOLUTION