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Title: Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays

Abstract

In this work, theoretical consideration of the processes in planar High Purity Ge (HPGe) detectors for low energy X-rays using the random stochastic processes formalism was carried out. Using the random stochastic processes formalism, the generating function of the processes of X-rays registration in a planar HPGe detector was derived. The power serial expansions of the detector amplitude and the variance in terms of the inverse bias voltage were derived. The coefficients of these expansions allow determining the Fano factor, electron mobility lifetime product, nonuniformity of the trap density, and other characteristics of the semiconductor material. (authors)

Authors:
 [1]
  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31, Kashirskoye Shosse, 115409, Moscow, (Russian Federation)
Publication Date:
Research Org.:
Institute of Electrical and Electronics Engineers - IEEE, 3 Park Avenue, 17th Floor, New York, N.Y. 10016-5997 (United States)
OSTI Identifier:
22531286
Report Number(s):
ANIMMA-2015-IO-235
TRN: US16V0314102227
Resource Type:
Conference
Resource Relation:
Conference: ANIMMA 2015: 4. International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Lisboa (Portugal), 20-24 Apr 2015; Other Information: Country of input: France; 8 Refs.
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLITUDES; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ENERGY RESOLUTION; FANO FACTOR; HIGH-PURITY GE DETECTORS; LIFETIME; RANDOMNESS; SEMICONDUCTOR MATERIALS; STOCHASTIC PROCESSES; TRAPS; X RADIATION

Citation Formats

Samedov, Victor V. Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays. United States: N. p., 2015. Web. doi:10.1109/ANIMMA.2015.7465586.
Samedov, Victor V. Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays. United States. https://doi.org/10.1109/ANIMMA.2015.7465586
Samedov, Victor V. Wed . "Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays". United States. https://doi.org/10.1109/ANIMMA.2015.7465586.
@article{osti_22531286,
title = {Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays},
author = {Samedov, Victor V.},
abstractNote = {In this work, theoretical consideration of the processes in planar High Purity Ge (HPGe) detectors for low energy X-rays using the random stochastic processes formalism was carried out. Using the random stochastic processes formalism, the generating function of the processes of X-rays registration in a planar HPGe detector was derived. The power serial expansions of the detector amplitude and the variance in terms of the inverse bias voltage were derived. The coefficients of these expansions allow determining the Fano factor, electron mobility lifetime product, nonuniformity of the trap density, and other characteristics of the semiconductor material. (authors)},
doi = {10.1109/ANIMMA.2015.7465586},
url = {https://www.osti.gov/biblio/22531286}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}

Conference:
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