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Title: ELECTRONIC TRANSITIONS OF JET-COOLED SiC{sub 2}, Si{sub 2}C{sub n} (n=1−3), Si{sub 3}C{sub n} (n = 1,2), AND SiC{sub 6}H{sub 4} BETWEEN 250 AND 710 nm

Abstract

Electronic transitions of the title molecules were measured between 250 and 710 nm using a mass-resolved 1 + 1’ resonant two-photon ionization technique at a resolution of 0.1 nm. Calculations at the B3LYP/aug-cc-pVQZ level of theory support the analyses. Because of their spectral properties, SiC{sub 2}, linear Si{sub 2}C{sub 2}, Si{sub 3}C, and SiC{sub 6}H{sub 4} are interesting target species for astronomical searches in the visible spectral region. Of special relevance is the Si–C{sub 2}–Si chain, which features a prominent band at 516.4 nm of a strong transition (f = 0.25). This band and one from SiC{sub 6}H{sub 4} at 445.3 nm were also investigated at higher resolution (0.002 nm)

Authors:
;  [1]
  1. Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland)
Publication Date:
OSTI Identifier:
22522087
Resource Type:
Journal Article
Resource Relation:
Journal Name: Astrophysical Journal; Journal Volume: 801; Journal Issue: 2; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 79 ASTROPHYSICS, COSMOLOGY AND ASTRONOMY; ENERGY-LEVEL TRANSITIONS; HYDROCARBONS; JETS; MASS; MOLECULES; MULTI-PHOTON PROCESSES; PHOTOIONIZATION; RESOLUTION; SILICON CARBIDES; VISIBLE SPECTRA

Citation Formats

Steglich, M., and Maier, J. P., E-mail: m.steglich@web.de, E-mail: j.p.maier@unibas.ch. ELECTRONIC TRANSITIONS OF JET-COOLED SiC{sub 2}, Si{sub 2}C{sub n} (n=1−3), Si{sub 3}C{sub n} (n = 1,2), AND SiC{sub 6}H{sub 4} BETWEEN 250 AND 710 nm. United States: N. p., 2015. Web. doi:10.1088/0004-637X/801/2/119.
Steglich, M., & Maier, J. P., E-mail: m.steglich@web.de, E-mail: j.p.maier@unibas.ch. ELECTRONIC TRANSITIONS OF JET-COOLED SiC{sub 2}, Si{sub 2}C{sub n} (n=1−3), Si{sub 3}C{sub n} (n = 1,2), AND SiC{sub 6}H{sub 4} BETWEEN 250 AND 710 nm. United States. doi:10.1088/0004-637X/801/2/119.
Steglich, M., and Maier, J. P., E-mail: m.steglich@web.de, E-mail: j.p.maier@unibas.ch. Tue . "ELECTRONIC TRANSITIONS OF JET-COOLED SiC{sub 2}, Si{sub 2}C{sub n} (n=1−3), Si{sub 3}C{sub n} (n = 1,2), AND SiC{sub 6}H{sub 4} BETWEEN 250 AND 710 nm". United States. doi:10.1088/0004-637X/801/2/119.
@article{osti_22522087,
title = {ELECTRONIC TRANSITIONS OF JET-COOLED SiC{sub 2}, Si{sub 2}C{sub n} (n=1−3), Si{sub 3}C{sub n} (n = 1,2), AND SiC{sub 6}H{sub 4} BETWEEN 250 AND 710 nm},
author = {Steglich, M. and Maier, J. P., E-mail: m.steglich@web.de, E-mail: j.p.maier@unibas.ch},
abstractNote = {Electronic transitions of the title molecules were measured between 250 and 710 nm using a mass-resolved 1 + 1’ resonant two-photon ionization technique at a resolution of 0.1 nm. Calculations at the B3LYP/aug-cc-pVQZ level of theory support the analyses. Because of their spectral properties, SiC{sub 2}, linear Si{sub 2}C{sub 2}, Si{sub 3}C, and SiC{sub 6}H{sub 4} are interesting target species for astronomical searches in the visible spectral region. Of special relevance is the Si–C{sub 2}–Si chain, which features a prominent band at 516.4 nm of a strong transition (f = 0.25). This band and one from SiC{sub 6}H{sub 4} at 445.3 nm were also investigated at higher resolution (0.002 nm)},
doi = {10.1088/0004-637X/801/2/119},
journal = {Astrophysical Journal},
number = 2,
volume = 801,
place = {United States},
year = {Tue Mar 10 00:00:00 EDT 2015},
month = {Tue Mar 10 00:00:00 EDT 2015}
}