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Title: High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Abstract

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

Authors:
; ; ; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22499246
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; FILMS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; OXIDES; PEROVSKITE; SEMICONDUCTOR MATERIALS; STANNATES; VOLATILITY

Citation Formats

Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., & Stemmer, Susanne. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy. United States. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. Fri . "High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy". United States. doi:10.1063/1.4939657.
@article{osti_22499246,
title = {High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy},
author = {Raghavan, Santosh and Schumann, Timo and Kim, Honggyu and Zhang, Jack Y. and Cain, Tyler A. and Stemmer, Susanne},
abstractNote = {High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.},
doi = {10.1063/1.4939657},
journal = {APL Materials},
issn = {2166-532X},
number = 1,
volume = 4,
place = {United States},
year = {2016},
month = {1}
}

Works referencing / citing this record:

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
journal, July 2018


Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3
journal, July 2019


Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
journal, June 2019


Conductive Oxide Interfaces for Field Effect Devices
journal, June 2019