High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne

doi:10.1063/1.4939657

Title: High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Journal Article · Fri Jan 01 00:00:00 EST 2016 · APL Materials

DOI:https://doi.org/10.1063/1.4939657· OSTI ID:22499246

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne ^[1]

Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

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OSTI ID:: 22499246

Journal Information:: APL Materials, Vol. 4, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X

Country of Publication:: United States

Language:: English

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