Epitaxial growth of high quality WO{sub 3} thin films
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
We have grown epitaxial WO{sub 3} films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO{sub 4} substrates, films grown on Y AlO{sub 3} substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed.
- OSTI ID:
- 22499239
- Journal Information:
- APL Materials, Vol. 3, Issue 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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