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Title: Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Abstract

A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either frontside or backside. Morphology, structural, chemical, and optical properties of sputtered NiO and ZnO films were also investigated.

Authors:
 [1];  [2]; ;  [1];  [2];  [3];  [4];  [1];  [2];  [5];  [1]
  1. Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. (United States)
  3. Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  4. Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  5. Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030 (United States)
Publication Date:
OSTI Identifier:
22499214
Resource Type:
Journal Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; FILMS; INDIUM; NICKEL OXIDES; OPTICAL PROPERTIES; PHOTODETECTORS; PLASTICS; POLYESTERS; QUANTUM EFFICIENCY; SPUTTERING; SUBSTRATES; TIN OXIDES; ZINC OXIDES

Citation Formats

Hasan, Md Rezaul, Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030, Xie, Ting, Liu, Guannan, Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, Barron, Sara C., Nguyen, Nhan V., Motayed, Abhishek, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Rao, Mulpuri V., and Debnath, Ratan, E-mail: ratan.debnath@nist.gov. Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates. United States: N. p., 2015. Web. doi:10.1063/1.4932194.
Hasan, Md Rezaul, Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030, Xie, Ting, Liu, Guannan, Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, Barron, Sara C., Nguyen, Nhan V., Motayed, Abhishek, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Rao, Mulpuri V., & Debnath, Ratan, E-mail: ratan.debnath@nist.gov. Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates. United States. doi:10.1063/1.4932194.
Hasan, Md Rezaul, Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030, Xie, Ting, Liu, Guannan, Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, Barron, Sara C., Nguyen, Nhan V., Motayed, Abhishek, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, Rao, Mulpuri V., and Debnath, Ratan, E-mail: ratan.debnath@nist.gov. Thu . "Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates". United States. doi:10.1063/1.4932194.
@article{osti_22499214,
title = {Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates},
author = {Hasan, Md Rezaul and Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, Virginia 22030 and Xie, Ting and Liu, Guannan and Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742 and Barron, Sara C. and Nguyen, Nhan V. and Motayed, Abhishek and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 and Rao, Mulpuri V. and Debnath, Ratan, E-mail: ratan.debnath@nist.gov},
abstractNote = {A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either frontside or backside. Morphology, structural, chemical, and optical properties of sputtered NiO and ZnO films were also investigated.},
doi = {10.1063/1.4932194},
journal = {APL Materials},
issn = {2166-532X},
number = 10,
volume = 3,
place = {United States},
year = {2015},
month = {10}
}