Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Understanding of the Schottky barriers formed at metal contact-InAs nanowire interfaces is of great importance for the development of high-performance InAs nanowire nanoelectronic and quantum devices. Here, we report a systematical study of InAs nanowire field-effect transistors (FETs) and the Schottky barrier heights formed at the contact-nanowire interfaces. The InAs nanowires employed are grown by molecular beam epitaxy and are high material quality single crystals, and the devices are made by directly contacting the nanowires with a series of metals of different work functions. The fabricated InAs nanowire FET devices are characterized by electrical measurements at different temperatures and the Schottky barrier heights are extracted from the measured temperature and gate-voltage dependences of the channel current. We show that although the work functions of the contact metals are widely spread, the Schottky barrier heights are determined to be distributed over 35–55 meV, showing a weak but not negligible dependence on the metals. The deduced Fermi level in the InAs nanowire channels is found to be in the band gap and very close to the conduction band. The physical origin of the results is discussed in terms of Fermi level pinning by the surface states of the InAs nanowires and a shift in pinned Fermi level induced by the metal-related interface states.
- OSTI ID:
- 22494977
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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