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Title: Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)

Abstract

NiAs-type manganese telluride (MnTe) films with preferred crystallographic plane of (110) were prepared on Si/SiO{sub 2} substrates by pulsed laser deposition. X-ray diffraction (XRD) of the films was studied at different temperatures. The XRD peak of MnTe (110) films shifts to higher angle with decreasing temperature, showing the decrease of the lattice parameter. Resistivity of the films was studied in the temperature range of 2–350 K. The bump between 150 and 250 K was observed in the films, which may be related to the special s-d and p-d overlaps induced by the compressed lattice. The magnon drag effect near its Néel temperature T{sub N} and enlarged magnetic-elastic coupling below 100 K were observed and analyzed in details.

Authors:
;  [1]
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)
Publication Date:
OSTI Identifier:
22494958
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALLOGRAPHY; ELECTRICAL PROPERTIES; ELECTROPHORESIS; ENERGY BEAM DEPOSITION; FILMS; LASER RADIATION; LATTICE PARAMETERS; MANGANESE TELLURIDES; PEAKS; PULSED IRRADIATION; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; X-RAY DIFFRACTION

Citation Formats

Yang, L., Wang, Z. H., E-mail: zhwang@imr.ac.cn, and Zhang, Z. D. Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110). United States: N. p., 2016. Web. doi:10.1063/1.4940950.
Yang, L., Wang, Z. H., E-mail: zhwang@imr.ac.cn, & Zhang, Z. D. Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110). United States. doi:10.1063/1.4940950.
Yang, L., Wang, Z. H., E-mail: zhwang@imr.ac.cn, and Zhang, Z. D. Thu . "Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)". United States. doi:10.1063/1.4940950.
@article{osti_22494958,
title = {Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)},
author = {Yang, L. and Wang, Z. H., E-mail: zhwang@imr.ac.cn and Zhang, Z. D.},
abstractNote = {NiAs-type manganese telluride (MnTe) films with preferred crystallographic plane of (110) were prepared on Si/SiO{sub 2} substrates by pulsed laser deposition. X-ray diffraction (XRD) of the films was studied at different temperatures. The XRD peak of MnTe (110) films shifts to higher angle with decreasing temperature, showing the decrease of the lattice parameter. Resistivity of the films was studied in the temperature range of 2–350 K. The bump between 150 and 250 K was observed in the films, which may be related to the special s-d and p-d overlaps induced by the compressed lattice. The magnon drag effect near its Néel temperature T{sub N} and enlarged magnetic-elastic coupling below 100 K were observed and analyzed in details.},
doi = {10.1063/1.4940950},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 119,
place = {United States},
year = {2016},
month = {1}
}