All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Journal Article · Thu Jan 28 00:00:00 EST 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4940702· OSTI ID:22494956

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

• OSTI ID: 22494956
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL GROWTH
MAGNETIZATION
MOLECULAR BEAM EPITAXY
PERFORMANCE
SEMICONDUCTOR MATERIALS
SPIN
SURFACTANTS
TEMPERATURE RANGE 0400-1000 K
VALVES