Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)
- School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China)
Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10{sup 4 }J/m{sup 3} and 10 × 10{sup 4 }J/m{sup 3}, the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.
- OSTI ID:
- 22494939
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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